2N6520RLRAG ON Semiconductor, 2N6520RLRAG Datasheet

TRANS PNP GP SS 350V TO92

2N6520RLRAG

Manufacturer Part Number
2N6520RLRAG
Description
TRANS PNP GP SS 350V TO92
Manufacturer
ON Semiconductor
Datasheet

Specifications of 2N6520RLRAG

Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
350V
Vce Saturation (max) @ Ib, Ic
1V @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 50mA, 10V
Power - Max
625mW
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
350 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
625 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
20 at 1 mA at 10 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N6520RLRAGOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6520RLRAG
Manufacturer:
ON Semiconductor
Quantity:
4 900
NPN − 2N6515, 2N6517;
PNP − 2N6520
High Voltage Transistors
NPN and PNP
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Base Current
Collector Current − Continuous
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Voltage and Current are Negative for PNP Transistors
These are Pb−Free Devices*
Characteristic
Rating
2N6517, 2N6520
2N6517, 2N6520
2N6515, 2N6517
A
C
= 25°C
= 25°C
2N6515
2N6515
2N6520
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
I
qJA
qJC
C
B
D
D
stg
−55 to +150
Value
Max
83.3
250
350
250
350
250
500
625
200
6.0
5.0
5.0
1.5
12
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
BASE
CASE 29
STYLE 1
2
TO−92
(Note: Microdot may be in either location)
COLLECTOR
ORDERING INFORMATION
xx
A
Y
WW
G
EMITTER
STRAIGHT LEAD
MARKING DIAGRAM
3
http://onsemi.com
1
BULK PACK
1 2
= 15, 17, or 20
= Assembly Location
= Year
= Work Week
= Pb−Free Package
NPN
3
AYWW G
65xx
2N
G
Publication Order Number:
BASE
2
TAPE & REEL
COLLECTOR
AMMO PACK
BENT LEAD
1
EMITTER
2
3
3
1
2N6515/D
PNP

Related parts for 2N6520RLRAG

2N6520RLRAG Summary of contents

Page 1

... Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − ...

Page 2

NPN − 2N6515, 2N6517; PNP − 2N6520 ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1.0 mAdc Collector−Base Breakdown Voltage = 100 mAdc Emitter−Base ...

Page 3

NPN − 2N6515, 2N6517; PNP − 2N6520 200 V CE 100 1.0 200 T = 125° 100 25° −55° 1.0 2.0 3.0 5.0 7.0 10 ...

Page 4

NPN − 2N6515, 2N6517; PNP − 2N6520 1 25°C J 1.2 1.0 0 BE(sat 0 BE(on) CE 0.4 0 ...

Page 5

NPN − 2N6515, 2N6517; PNP − 2N6520 1.0 k 700 500 2 BE(off) 300 200 t r 100 1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT ...

Page 6

... COLLECTOR−EMITTER VOLTAGE (VOLTS) CE Figure 18. Active Region Safe Operating Area ORDERING INFORMATION Device 2N6515RLRMG 2N6517G 2N6517RLRPG 2N6520RLRAG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. = r(t) • qJC(t) = r(t) • qJA(t) 5 ...

Page 7

... SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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