2N6520RLRAG ON Semiconductor, 2N6520RLRAG Datasheet - Page 2

• Manufacturer Part Number: 2N6520RLRAG
• Description: TRANS PNP GP SS 350V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N6520RLRAG

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 50mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 at 1 mA at 10 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N6520RLRAGOSTR

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base−Emitter On Voltage
Current−Gain − Bandwidth Product (Note 1)
Collector−Base Capacitance
Emitter−Base Capacitance
Turn−On Time
Turn−Off Time
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(V
(V
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
EB
CB
EB
CC
CC
= 10 mAdc, I
= 1.0 mAdc, I
= 100 mAdc, I
= 1.0 mAdc, V
= 10 mAdc, V
= 30 mAdc, V
= 50 mAdc, V
= 100 mAdc, V
= 10 mAdc, I
= 20 mAdc, I
= 30 mAdc, I
= 50 mAdc, I
= 10 mAdc, I
= 20 mAdc, I
= 30 mAdc, I
= 100 mAdc, V
= 10 mAdc, V
= 150 Vdc, I
= 250 Vdc, I
= 5.0 Vdc, I
= 4.0 Vdc, I
= 20 Vdc, I
= 0.5 Vdc, I
= 100 Vdc, V
= 100 Vdc, I
C
B
B
B
B
B
B
B
E
B
E
C
C
CE
CE
CE
CE
C
= 0)
E
E
CE
C
= 1.0 mAdc)
= 2.0 mAdc)
= 3.0 mAdc)
= 5.0 mAdc)
= 1.0 mAdc)
= 2.0 mAdc)
= 3.0 mAdc)
CE
CE
= 0, f = 1.0 MHz)
= 0)
= 0 )
BE(off)
= 0)
= 0)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 50 mAdc, I
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
= 20 Vdc, f = 20 MHz)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
= 2.0 Vdc, I
Characteristic
B1
NPN − 2N6515, 2N6517; PNP − 2N6520
= I
C
(T
B2
= 50 mAdc, I
A
= 10 mAdc)
= 25°C unless otherwise noted)
B1
http://onsemi.com
= 10 mAdc)
2
2N6515, 2N6517
2N6517, 2N6520
2N6517, 2N6520
2N6515, 2N6517
2N6517, 2N6520
2N6515, 2N6517
2N6517, 2N6520
2N6517, 2N6520
2N6517, 2N6520
2N6517, 2N6520
2N6517, 2N6520
2N6515
2N6515
2N6520
2N6515
2N6520
2N6515
2N6515
2N6515
2N6515
2N6515
2N6520
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
I
I
BE(on)
C
CBO
EBO
h
C
t
t
f
on
off
FE
T
cb
eb
Min
250
350
250
350
6.0
5.0
35
20
50
30
50
30
45
20
25
15
40
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.30
0.35
0.50
0.75
0.85
0.90
300
200
220
200
200
100
200
1.0
2.0
6.0
3.5
50
50
50
50
80
−
−
−
−
−
−
−
−
−
−
−
−
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ms
ms
−