MMBT6517LT1G ON Semiconductor, MMBT6517LT1G Datasheet - Page 14

• Manufacturer Part Number: MMBT6517LT1G
• Description: TRANS SS NPN 350V HV SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT6517LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 50mA, 10V
• Power - Max: 225mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 at 0.1 mA at 10 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT6517LT1GOSTR

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Issue Date: 11 Jul 2008
Rev.07-02-06
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