MMBT6517LT1G ON Semiconductor, MMBT6517LT1G Datasheet

TRANS SS NPN 350V HV SOT23

MMBT6517LT1G

Manufacturer Part Number
MMBT6517LT1G
Description
TRANS SS NPN 350V HV SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBT6517LT1G

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
350V
Vce Saturation (max) @ Ib, Ic
1V @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 50mA, 10V
Power - Max
225mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
350 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
225 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
20 at 0.1 mA at 10 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT6517LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBT6517LT1G
Manufacturer:
ON
Quantity:
36 000
Part Number:
MMBT6517LT1G
Manufacturer:
ON
Quantity:
3 000
Part Number:
MMBT6517LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT6517LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBT6517LT1G
High Voltage Transistor
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Base Current
Collector Current − Continuous
Total Device Dissipation FR− 5 Board
(Note 1) T
Derate above 25°C
Thermal Resistance,
Total Device Dissipation
Alumina Substrate, (Note 2) T
Derate above 25°C
Thermal Resistance,
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
A
Junction−to−Ambient
Junction−to−Ambient
= 25°C
Characteristic
Rating
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
I
qJA
qJA
B
C
D
D
stg
−55 to +150
Value
Max
350
350
100
225
556
300
417
5.0
1.8
2.4
25
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
mW
mW
mA
mA
°C
V
V
V
†For information on tape and reel specifications,
MMBT6517LT1G
MMBT6517LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
1Z
M
G
MARKING DIAGRAM
http://onsemi.com
BASE
SOT−23 (TO−236AB)
1
1
1
(Pb−Free)
(Pb−Free)
Package
= Device Code
= Date Code*
= Pb−Free Package
SOT−23
SOT−23
CASE 318
STYLE 6
COLLECTOR
1Z M G
2
EMITTER
Publication Order Number:
G
3
2
3
10,000 Tape & Reel
3000 Tape & Reel
MMBT6517LT1/D
Shipping

Related parts for MMBT6517LT1G

MMBT6517LT1G Summary of contents

Page 1

... Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT6517LT1G SOT−23 3000 Tape & Reel (Pb−Free) MMBT6517LT3G SOT−23 10,000 Tape & Reel (Pb−Free) † ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = 1.0 mA) C Collector −Base Breakdown Voltage (I = 100 mA) C Emitter−Base Breakdown Voltage ( mA) E Collector Cutoff Current (V = 250 V) CB Emitter ...

Page 3

T = 125° 100 25° 55° 1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain 1 ...

Page 4

BE(off) 300 200 t r 100 1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 6. Turn−On Time +10.8 ...

Page 5

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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