MMBT6517LT1G ON Semiconductor, MMBT6517LT1G Datasheet - Page 3

• Manufacturer Part Number: MMBT6517LT1G
• Description: TRANS SS NPN 350V HV SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT6517LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 50mA, 10V
• Power - Max: 225mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 at 0.1 mA at 10 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT6517LT1GOSTR

200
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
70
50
30
20
10
0
1.0
1.0
V
CE
= 10 V
2.0
2.0 3.0
3.0
V
V
BE(sat)
V
Figure 1. DC Current Gain
CE(sat)
I
C
I
Figure 3. “On” Voltages
BE(on)
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
T
J
5.0 7.0 10
= 25°C
5.0 7.0
@ I
@ I
@ V
T
J
C
C
/I
= 125°C
/I
CE
B
B
25°C
- 55°C
= 10
= 10
= 10 V
10
100
7.0
5.0
3.0
2.0
1.0
70
50
30
20
10
0.2
20
20
V
CE(sat)
30
30
0.5
@ I
50 70
50 70
1.0
C
/I
http://onsemi.com
V
B
R
= 5.0
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
2.0
100
100
3
5.0
C
eb
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
2.5
2.0
1.5
1.0
0.5
100
70
50
30
20
10
0
1.0
10
1.0
Figure 2. Current−Gain — Bandwidth Product
R
R
C
20
qVC
qVB
cb
2.0
2.0
Figure 4. Temperature Coefficients
for V
for V
T
CE(sat)
BE
3.0
J
3.0
= 25°C
I
C
I
50 100
C
, COLLECTOR CURRENT (mA)
I C
I B
, COLLECTOR CURRENT (mA)
5.0 7.0 10
5.0 7.0 10
+ 10
200
- 55°C to 25°C
T
V
f = 20 MHz
J
CE
- 55°C to 125°C
= 25°C
25°C to 125°C
= 20 V
20
20
30
30
50 70
50 70
100
100