MMBT6517LT1G ON Semiconductor, MMBT6517LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBT6517LT1G
• Description: TRANS SS NPN 350V HV SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT6517LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 50mA, 10V
• Power - Max: 225mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 at 0.1 mA at 10 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT6517LT1GOSTR

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage (Note 3)
Base −Emitter Saturation Voltage
Base −Emitter On Voltage
Current Gain − Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
EB
CB
EB
= 10 mA)
= 1.0 mA)
= 100 mA)
= 1.0 mA, V
= 10 mA, V
= 30 mA, V
= 50 mA, V
= 100 mA, V
= 10 mA, I
= 20 mA, I
= 30 mA, I
= 50 mA, I
= 10 mA, I
= 20 mA, I
= 30 mA, I
= 100 mA, V
= 10 mA, V
= 250 V)
= 5.0 V)
= 20 V, f = 1.0 MHz)
= 0.5 V, f = 1.0 MHz)
B
B
B
B
B
B
B
CE
CE
CE
CE
CE
= 1.0 mA)
= 2.0 mA)
= 3.0 mA)
= 5.0 mA)
= 1.0 mA)
= 2.0 mA)
= 3.0 mA)
CE
CE
= 10 V)
= 10 V)
= 10 V)
= 20 V, f = 20 MHz)
= 10 V)
= 10 V)
= 10 V)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
I
I
h
CBO
C
C
EBO
f
FE
T
eb
cb
Min
350
350
6.0
20
30
30
20
15
40
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.30
0.35
0.50
0.75
0.85
0.90
200
200
200
1.0
2.0
6.0
50
50
80
−
−
−
−
−
−
MHz
Unit
nA
nA
pF
pF
V
V
V
V
V
V
−