2N4401G ON Semiconductor, 2N4401G Datasheet

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2N4401G

Manufacturer Part Number
2N4401G
Description
TRANS SS NPN GP 40V 600MA TO-92
Manufacturer
ON Semiconductor
Type
General Purposer
Datasheets

Specifications of 2N4401G

Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
750mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 1V
Power - Max
625mW
Frequency - Transition
250MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage(max)
60V
Emitter-base Voltage (max)
6V
Collector Current (dc) (max)
600mA
Power Dissipation
625mW
Frequency (max)
250MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Configuration
Single
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
20 at 0.1 mA at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
600 mA
Current, Gain
40
Frequency
250 MHz
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.75 V
Voltage, Emitter To Base
6 V
Dc
1126
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
2N4401G
2N4401GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N4401G
Manufacturer:
ON
Quantity:
34 453
Part Number:
2N4401G
Manufacturer:
ON Semiconductor
Quantity:
4 050
Part Number:
2N4401G
Manufacturer:
ONSemi
Quantity:
3 375
Part Number:
2N4401G
Manufacturer:
0N
Quantity:
20 000
2N4401
General Purpose
Transistors
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 4
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
Total Device Dissipation
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Pb−Free Packages are Available*
@ T
Derate above 25°C
@ T
Derate above 25°C
Characteristic
A
C
= 25°C
= 25°C
Rating
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJC
C
D
D
stg
−55 to
Value
+150
Max
83.3
600
625
200
6.0
5.0
1.5
40
60
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
CASE 29
STYLE 1
TO−92
(Note: Microdot may be in either location)
2N4401 = Device Code
A
Y
WW
G
ORDERING INFORMATION
STRAIGHT LEAD
MARKING DIAGRAM
http://onsemi.com
BULK PACK
BASE
1 2
2
3
= Assembly Location
= Year
= Work Week
= Pb−Free Package
AYWW G
4401
COLLECTOR
2N
G
Publication Order Number:
EMITTER
3
1
TAPE & REEL
AMMO PACK
BENT LEAD
1
2
3
2N4401/D

Related parts for 2N4401G

2N4401G Summary of contents

Page 1

... Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 February, 2010 − ...

Page 2

... Fall Time Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device 2N4401 2N4401G 2N4401RLRA 2N4401RLRAG 2N4401RLRMG 2N4401RLRP 2N4401RLRPG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 3

SWITCHING TIME EQUIVALENT TEST CIRCUITS 1.0 to 100 ms, DUTY CYCLE ≈ 2. 2.0 V < 2.0 ns Figure 1. Turn−On Time 7.0 5.0 3.0 2.0 0.1 0.2 0.3 0.5 ...

Page 4

I , COLLECTOR CURRENT (mA) C Figure 7. Storage Time 10 = 150 1.0 mA 500 mA 200 W ...

Page 5

This group of graphs illustrates the relationship between h and other “h” parameters for this series of transistors obtain these curves, a high−gain and a low−gain unit were 300 200 100 0.1 0.2 0.3 ...

Page 6

1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 1.0 0 0.4 0.2 0 0.01 0.02 0.03 0.05 ...

Page 7

... SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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