2N4401G ON Semiconductor, 2N4401G Datasheet - Page 4

• Manufacturer Part Number: 2N4401G
• Description: TRANS SS NPN GP 40V 600MA TO-92
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of 2N4401G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 60V
• Emitter-base Voltage (max): 6V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 625mW
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Configuration: Single
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 600 mA
• Current, Gain: 40
• Frequency: 250 MHz
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.75 V
• Voltage, Emitter To Base: 6 V
• Dc: 1126
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 2N4401G; 2N4401GOS

300
200
100
8.0
6.0
4.0
2.0
70
50
30
10
0
0.01 0.02 0.05
10
20
I
I
I
I
C
C
C
C
Figure 9. Frequency Effects
= 500 mA, R
= 100 mA, R
= 50 mA, R
0.1
= 1.0 mA, R
I
30
C
Figure 7. Storage Time
, COLLECTOR CURRENT (mA)
0.2
f, FREQUENCY (kHz)
S
50
0.5
S
S
S
= 4.0 kW
= 150 W
= 200 W
= 2.0 kW
1.0
70
2.0 5.0
100
V
SMALL−SIGNAL CHARACTERISTICS
t
I
I
CE
s
B1
C
R
RS =
RS =
′ = t
/I
S
B
= I
10
200
= OPTIMUM
= 10 Vdc, T
= 10 to 20
s
B2
SOURCE
RESISTANCE
- 1/8 t
20
300
f
http://onsemi.com
50
NOISE FIGURE
A
500
100
= 25°C; Bandwidth = 1.0 Hz
4
8.0
6.0
4.0
2.0
100
7.0
10
5.0
70
50
30
20
10
0
50
10
100 200
Figure 10. Source Resistance Effects
f = 1.0 kHz
20
I
I
I
I
C
C
C
C
R
I
C
S
= 50 mA
= 100 mA
= 500 mA
= 1.0 mA
I
30
/I
C
, SOURCE RESISTANCE (OHMS)
500 1.0 k 2.0 k
, COLLECTOR CURRENT (mA)
B
Figure 8. Fall Time
= 10
50
I
C
/I
70
B
= 20
100
5.0 k 10 k 20 k
200
V
I
B1
CC
= I
= 30 V
B2
300
50 k
100 k
500