MPS8099G ON Semiconductor, MPS8099G Datasheet

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MPS8099G

Manufacturer Part Number
MPS8099G
Description
TRANSISTOR NPN GP BIPO 80V TO-92
Manufacturer
ON Semiconductor
Type
Amplifierr
Datasheets

Specifications of MPS8099G

Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Power - Max
625mW
Frequency - Transition
150MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
625 mW
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
500 mA
Current, Gain
75
Frequency
150 MHz
Package Type
TO-92
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
0.4 V
Voltage, Emitter To Base
5 V
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
80V
Emitter-base Voltage
5V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
100
Frequency (max)
150MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MPS8099G
MPS8099GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPS8099G
Manufacturer:
ON/安森美
Quantity:
20 000
NPN − MPS8099; PNP −
MPS8599
Amplifier Transistors
Voltage and Current are Negative
for PNP Transistors
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. R
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 0
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
(Note 1)
Thermal Resistance, Junction−to−Case
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Pb−Free Packages are Available*
qJA
is measured with the device soldered into a typical printed circuit board.
Characteristic
Rating
A
Preferred Device
C
= 25°C
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJC
qJA
C
D
D
stg
−55 to +150
Value
Max
83.3
500
625
200
4.0
5.0
1.5
80
80
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
BASE
CASE 29
STYLE 1
2
TO−92
(Note: Microdot may be in either location)
COLLECTOR
ORDERING INFORMATION
NPN
x
A
Y
WW
G
EMITTER
STRAIGHT LEAD
MARKING DIAGRAM
3
http://onsemi.com
BULK PACK
1
1 2
= 0 or 5
= Assembly Location
= Year
= Work Week
= Pb−Free Package
3
AYWW G
MPS
8x99
G
Publication Order Number:
BASE
2
TAPE & REEL
AMMO PACK
BENT LEAD
1
COLLECTOR
2
PNP
MPS8099/D
EMITTER
3
3
1

Related parts for MPS8099G

MPS8099G Summary of contents

Page 1

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 April, 2007 − Rev. 0 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note mAdc Collector −Base Breakdown Voltage = 100 mAdc Emitter −Base Breakdown Voltage = 10 mAdc, ...

Page 3

... ORDERING INFORMATION Device MPS8099 MPS8099G MPS8099RLRA MPS8099RLRAG MPS8099RLRP MPS8099RLRPG MPS8599RLRA MPS8599RLRAG MPS8599RLRMG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 0.5 0.7 0.5 0.2 0.3 0.1 0.2 ...

Page 4

NPN − MPS8099; PNP − MPS8599 NPN 300 T = 25°C J 200 V 100 1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 3. Current−Gain − Bandwidth Product ibo ...

Page 5

NPN − MPS8099; PNP − MPS8599 NPN 1.0 k 700 500 300 200 100 70 50 CURRENT LIMIT THERMAL LIMIT 30 SECOND BREAKDOWN LIMIT 20 MPS8098 DUTY CYCLE ≤ 10% 10 1.0 2.0 3.0 5.0 7 ...

Page 6

NPN − MPS8099; PNP − MPS8599 NPN 2 1 100 mA 1.2 0.8 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 ...

Page 7

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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