MPS8099G ON Semiconductor, MPS8099G Datasheet - Page 2
MPS8099G
Manufacturer Part Number
MPS8099G
Description
TRANSISTOR NPN GP BIPO 80V TO-92
Manufacturer
ON Semiconductor
Type
Amplifierr
Specifications of MPS8099G
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Power - Max
625mW
Frequency - Transition
150MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
625 mW
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
500 mA
Current, Gain
75
Frequency
150 MHz
Package Type
TO-92
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
0.4 V
Voltage, Emitter To Base
5 V
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
80V
Emitter-base Voltage
5V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
100
Frequency (max)
150MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MPS8099G
MPS8099GOS
MPS8099GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPS8099G
Manufacturer:
ON/安森美
Quantity:
20 000
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter On Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
(V
C
C
E
C
C
C
C
C
C
C
CE
CB
EB
CB
EB
= 10 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 1.0 mAdc, V
= 10 mAdc, V
= 100 mAdc, V
= 100 mAdc, I
= 100 mAdc, I
= 10 mAdc, V
= 10 mAdc, V
= 4.0 Vdc, I
= 0.5 Vdc, I
= 60 Vdc, I
= 80 Vdc, I
= 5.0 Vdc, I
C
B
B
E
E
C
C
CE
CE
CE
E
= 0)
B
B
CE
= 0)
= 0)
= 0)
CE
= 0)
= 0)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 5.0 mAdc)
= 10 mAdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
= 5.0 Vdc)
= 5.0 Vdc)
Characteristic
(T
NPN − MPS8099; PNP − MPS8599
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
C
I
BE(on)
C
h
CES
CBO
EBO
f
obo
FE
ibo
T
Min
100
100
150
5.0
0.6
80
80
75
−
−
−
−
−
−
−
Max
300
0.1
0.1
0.1
0.4
0.3
0.8
8.0
30
−
−
−
−
−
−
mAdc
mAdc
mAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
−