FMMT591TA Diodes Zetex, FMMT591TA Datasheet - Page 2

• Manufacturer Part Number: FMMT591TA
• Description: TRANS PNP 60V 1A MED PWR SOT23-3
• Manufacturer: Diodes Zetex

Specifications of FMMT591TA

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 500mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 40V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 300
• Power Dissipation: 500mW
• Frequency (max): 150MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FMMT591TR

Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
Issue 4 - September 2007
© Zetex Semiconductors plc 2007
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation at T
Linear derating factor
Operating and storage temperature range
Parameter
Junction to ambient
still air conditions.
(a)
A
=25°C
(a)
(a)
2
Symbol
Symbol
T
V
V
V
R
j
I
, T
P
CBO
CEO
EBO
CM
I
C
D
JA
stg
-55 to 150
Value
Limit
250
-80
-60
500
-7
-1
-2
4
FMMT591
www.zetex.com
mW/°C
°C/W
Unit
Unit
mW
°C
A
A
V
V
V