FMMT591TA Diodes Zetex, FMMT591TA Datasheet - Page 5

• Manufacturer Part Number: FMMT591TA
• Description: TRANS PNP 60V 1A MED PWR SOT23-3
• Manufacturer: Diodes Zetex

Specifications of FMMT591TA

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 500mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 40V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 300
• Power Dissipation: 500mW
• Frequency (max): 150MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FMMT591TR

Typical characteristics
V
Issue 4 - September 2007
© Zetex Semiconductors plc 2007
CE(sat)
400
300
200
100
0.6
0.5
0.4
0.3
0.2
0.1
0
0.8
0.6
0.4
0.2
0
1.2
1.0
graphs represent MAX limit performance.
0
1mA
1mA
1mA
V
+100 °C
+25 ° C
V
+25 °C
-55 °C
CE
CE
=5V
=5V
10mA
10mA
10mA
I
C
I
I
I
C
C
-Collector Current
I
C
/I
/I
C
B
B
V
-Collector Current
-Collector Current
=10
=50
V
CE(sat)
h
BE(on)
FE
100mA
100mA
100mA
V I
v I
v I
C
C
C
+100 °C
+25 °C
-55 °C
1A
1A
1A
10A
10A
10A
5
0.01
0.6
0.5
0.4
0.3
0.2
0.1
0
0.8
0.6
0.4
0.2
0
1.0
0.1
10
1
1mA
1mA
0.1V
I
I
C
C
/I
/I
B
B
=10
=10
+100 °C
V
100us
+25 °C
100ms
-55 °C
10ms
CE
1ms
DC
1s
10mA
10mA
- Collector Emitter Voltage (V)
Safe Operating Area
I
C
I
-Collector Current
C
-Collector Current
1V
V
V
BE(sat)
CE(sat)
100mA
100mA
v I
v I
FMMT591
C
10V
C
www.zetex.com
+100 °C
+25 °C
-55 °C
1A
1A
100V
10A
10A