MJE340G ON Semiconductor, MJE340G Datasheet - Page 2

• Manufacturer Part Number: MJE340G
• Description: TRANS PWR NPN .5A 300V TO225AA
• Manufacturer: ON Semiconductor
• Type: Medium Powerr

Specifications of MJE340G

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 50mA, 10V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 20 W
• Continuous Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 30
• Current, Collector: 500 mA
• Current, Gain: 240
• Package Type: TO-225
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 6.25 °C/W
• Voltage, Breakdown, Collector To Emitter: 300 V
• Voltage, Collector To Emitter: 300 V
• Voltage, Emitter To Base: 3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Vce Saturation (max) @ Ib, Ic: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJE340GOS

0.05
0.03
0.02
0.01
1.0
0.5
0.3
0.2
0.1
ACTIVE−REGION SAFE OPERATING AREA
8.0
4.0
32
28
24
20
16
12
0
10
0
Figure 1. Power Temperature Derating
20
V
CE
T
20
J
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
= 150°C
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT T
SINGLE PULSE
40
T
C
30
Figure 3. MJE340
, CASE TEMPERATURE (°C)
60
MJE340
50
80
C
= 25°C
dc
70
100
100
1.0 ms
120
500 ms
200
140
10 ms
http://onsemi.com
300
MJE340
160
2
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.The data of Figure 3 is
based on T
conditions. Second breakdown pulse limits are valid for
duty cycles to 10% provided T
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
1.0
0.8
0.6
0.4
0.2
There are two limitations on the power handling ability of
0
10
V
T
J
CE(sat)
J(pk)
= 25°C
20
@ I
I
C
I
Figure 2. “On” Voltages
/I
30
C
= 150_C; T
B
, COLLECTOR CURRENT (mA)
C
/I
= 5.0
B
V
= 10
BE
@ V
50
V
BE(sat)
CE
= 10 V
C
J(pk)
@ I
is variable depending on
C
100
/I
v 150_C. At high case
B
= 10
200
300
C
− V
500
CE