MJE13007G ON Semiconductor, MJE13007G Datasheet - Page 2

• Manufacturer Part Number: MJE13007G
• Description: TRANS PWR NPN 8A 400V TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r
• Type: Powerr

Specifications of MJE13007G

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 3V @ 2A, 8A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 5 @ 5A, 5V
• Power - Max: 80W
• Frequency - Transition: 14MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 8 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 8 A
• Dc Collector/base Gain Hfe Min: 8
• Maximum Operating Frequency: 14 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 8 A
• Current, Gain: 30
• Frequency: 14 MHz
• Package Type: TO-220AB
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.56 °C/W
• Voltage, Breakdown, Collector To Emitter: 400 V
• Voltage, Collector To Emitter: 400 V
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Emitter To Base: 9 V
• Number Of Elements: 1
• Collector-emitter Voltage: 400V
• Emitter-base Voltage: 9V
• Collector Current (dc) (max): 8A
• Dc Current Gain (min): 8
• Frequency (max): 14MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJE13007GOS

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS (Note 2)
SECOND BREAKDOWN
ON CHARACTERISTICS (Note 2)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current−Gain − Bandwidth Product
Output Capacitance
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Voltage Storage Time
Crossover Time
Fall Time
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
C
C
C
C
C
C
C
C
C
C
C
CES
CES
EB
CB
= 10 mA, I
= 2.0 Adc, V
= 5.0 Adc, V
= 2.0 Adc, I
= 5.0 Adc, I
= 8.0 Adc, I
= 5.0 Adc, I
= 2.0 Adc, I
= 5.0 Adc, I
= 5.0 Adc, I
= 500 mAdc, V
= 9.0 Vdc, I
= 10 Vdc, I
= 700 Vdc)
= 700 Vdc, T
B
B
B
B
B
B
B
B
= 0)
CE
CE
E
C
= 0.4 Adc)
= 1.0 Adc)
= 2.0 Adc)
= 1.0 Adc, T
= 0.4 Adc)
= 1.0 Adc)
= 1.0 Adc, T
= 0, f = 0.1 MHz)
CE
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
C
= 125°C)
= 10 Vdc, f = 1.0 MHz)
(V
I
Duty Cycle ≤ 1.0%)
V
V
I
L
B1
B(on)
C
CC
clamp
CC
= 200 mH
= I
Characteristic
= 15 Vdc, I
= 125 Vdc, I
C
C
= 1.0 A, I
B2
= 300 Vdc
= 100°C)
= 100°C)
= 1.0 A, t
(T
B(off)
C
C
C
= 5.0 A
p
= 25°C unless otherwise noted)
= 5.0 A,
= 25 ms,
= 2.5 A
T
T
T
T
T
T
MJE13007
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
2
V
Symbol
V
V
CEO(sus)
CE(sat)
I
I
BE(sat)
I
h
C
CES
EBO
t
S/b
f
t
t
t
t
−
FE
t
t
sv
T
ob
d
s
c
fi
r
f
Min
400
8.0
5.0
4.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.025
0.23
0.15
0.21
0.04
0.10
Typ
0.5
1.8
1.2
1.6
14
80
−
−
−
−
−
−
−
−
−
−
−
−
−
See Figure 6
See Figure 7
Max
0.30
0.50
0.12
0.20
100
0.1
1.0
1.0
2.0
3.0
3.0
1.2
1.6
1.5
0.1
1.5
3.0
0.7
2.0
3.0
40
30
−
−
−
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
pF
ms
ms
ms
ms
−