MJE13007G ON Semiconductor, MJE13007G Datasheet

TRANS PWR NPN 8A 400V TO220AB

MJE13007G

Manufacturer Part Number
MJE13007G
Description
TRANS PWR NPN 8A 400V TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Type
Powerr
Datasheets

Specifications of MJE13007G

Transistor Type
NPN
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
3V @ 2A, 8A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
5 @ 5A, 5V
Power - Max
80W
Frequency - Transition
14MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
8 A
Power Dissipation
80 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
8 A
Dc Collector/base Gain Hfe Min
8
Maximum Operating Frequency
14 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
8 A
Current, Gain
30
Frequency
14 MHz
Package Type
TO-220AB
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
1.56 °C/W
Voltage, Breakdown, Collector To Emitter
400 V
Voltage, Collector To Emitter
400 V
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Emitter To Base
9 V
Number Of Elements
1
Collector-emitter Voltage
400V
Emitter-base Voltage
9V
Collector Current (dc) (max)
8A
Dc Current Gain (min)
8
Frequency (max)
14MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJE13007GOS
MJE13007G
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V SWITCHMODE applications such as
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay
drivers and Deflection circuits.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*Measurement made with thermocouple contacting the bottom insulated mounting
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 6
surface of the package (in a location beneath the die), the device mounted on a
heatsink with thermal grease applied at a mounting torque of 6 to 8lbs.
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
Emitter Current
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Temperature
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
The MJE13007G is designed for high−voltage, high−speed power
V
Reverse Bias SOA with Inductive Loads @ T
700 V Blocking Capability
SOA and Switching Applications Information
Standard TO−220
These Devices are Pb−Free and are RoHS Compliant*
CEO(sus)
400 V
Characteristics
Rating
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
C
= 25_C
Symbol
Symbol
T
V
V
V
R
R
J
I
I
I
P
CEO
EBO
, T
T
CES
CM
BM
EM
I
I
I
qJC
qJA
C
B
E
D
L
stg
C
= 100°C
−65 to 150
Value
0.64
Max
1.56
62.5
400
700
260
9.0
8.0
4.0
8.0
16
12
24
80
1
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
_C
_C
W
MJE13007G
Device
400 VOLTS − 80 WATTS
POWER TRANSISTOR
1
ORDERING INFORMATION
2
A
Y
WW = Work Week
G
3
MARKING DIAGRAM
8.0 AMPERES
http://onsemi.com
= Assembly Location
= Year
= Pb−Free Package
(Pb−Free)
MJE13007G
Package
TO−220
AY WW
CASE 221A−09
Publication Order Number:
TO−220AB
STYLE 1
50 Units / Rail
Shipping
MJE13007/D

Related parts for MJE13007G

MJE13007G Summary of contents

Page 1

... SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS (Note 2) Collector−Emitter Sustaining Voltage ( mA Collector Cutoff Current (V = 700 Vdc) CES (V = 700 Vdc 125°C) CES C Emitter Cutoff Current (V ...

Page 3

1 40°C C 0.8 25°C 0.6 100°C 0.4 0.01 0.02 0.05 0.1 0.2 0 COLLECTOR CURRENT (AMPS) C Figure 1. Base−Emitter Saturation Voltage 3 2.5 2 1.5 ...

Page 4

Extended SOA @ 1 ms 25° 0.5 0.2 BONDING WIRE LIMIT 0.1 THERMAL LIMIT 0.05 SECOND BREAKDOWN LIMIT CURVES APPLY BELOW ...

Page 5

... This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. NOTE: 1. For detailed information on specific switching applications, at rated V CEV CEV see ON Semiconductor Application Note AN719, AN873, AN875, AN951. http://onsemi.com 5 ...

Page 6

Table 1. Test Conditions For Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +15 150 W 100 MTP8P10 MPF930 MUR105 MPF930 +10 V MJE210 50 W 150 W COMMON 3 ...

Page 7

VOLTAGE REQUIREMENTS (continued) In the four application examples (Table 2) load lines are shown in relation to the pulsed forward and reverse biased SOA curves. In circuits A and D, inductive reactance is clamped by the diodes shown. In circuits ...

Page 8

V = 125 B(on) B(off 25°C J 1000 100 COLLECTOR CURRENT (AMP) C Figure 10. ...

Page 9

Table 2. Applications Examples of Switching Circuits CIRCUIT SERIES SWITCHING REGULATOR FLYBACK INVERTER PUSH−PULL INVERTER/CONVERTER SOLENOID DRIVER V CC SOLENOID D LOAD LINE DIAGRAMS ...

Page 10

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

Related keywords