MJE13007G ON Semiconductor, MJE13007G Datasheet - Page 6

• Manufacturer Part Number: MJE13007G
• Description: TRANS PWR NPN 8A 400V TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r
• Type: Powerr

Specifications of MJE13007G

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 3V @ 2A, 8A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 5 @ 5A, 5V
• Power - Max: 80W
• Frequency - Transition: 14MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 8 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 8 A
• Dc Collector/base Gain Hfe Min: 8
• Maximum Operating Frequency: 14 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 8 A
• Current, Gain: 30
• Frequency: 14 MHz
• Package Type: TO-220AB
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.56 °C/W
• Voltage, Breakdown, Collector To Emitter: 400 V
• Voltage, Collector To Emitter: 400 V
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Emitter To Base: 9 V
• Number Of Elements: 1
• Collector-emitter Voltage: 400V
• Emitter-base Voltage: 9V
• Collector Current (dc) (max): 8A
• Dc Current Gain (min): 8
• Frequency (max): 14MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJE13007GOS

COMMON
V
I
CE
C
+15
V
V
off
+10 V
I
CM
1 mF
TIME
V
MPF930
CEM
500 mF
50 W
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
t
1
150 W
t
t
3 W
f
f
CLAMPED
t
2
L = 10 mH
R
V
I
C(pk)
V
B2
CC
(BR)CEO(sus)
= 8
100 W
MPF930
= 20 Volts
3 W
= 100 mA
Table 1. Test Conditions For Dynamic Performance
t
f
V
UNCLAMPED ≈ t
150 W
clamp
3 W
t
t
MUR105
MJE210
MTP8P10
L = 200 mH
R
V
R
desired I
MTP8P10
MTP12N10
CC
B2
B1
2
Switching
Inductive
= 0
selected for
= 15 Volts
R
R
B1
SCOPE — TEKTRONIX
B1
B2
475 OR EQUIVALENT
http://onsemi.com
t
OBTAIN I
TEST EQUIPMENT
t
t
1
1
2
ADJUSTED TO
≈
≈
1 mF
A
L
L
coil
coil
V
V
C
clamp
CC
(I
(I
L = 500 mH
R
V
R
desired I
CM
CM
100 mF
CC
B2
B1
6
I
B
)
)
= 0
selected for
= 15 Volts
RBSOA
I
B1
B
TUT
V
CE
I
B
I
B1
L
V
I
C
CC
MUR8100E
V
CE
5.1 k
51
WAVEFORM
I
PEAK
B2
TYPICAL
V
CE
S
V
clamp
= 300 Vdc
+11 V
0
FOR DESIRED I
R
R
V
R
W D 1 = 1N5820 OR
EQUIV.
B
DUTY CYCLE = 1.0%
B
CC
C
SWITCHING
AND R
RESISTIVE
D
1
= 25
= 125 V
- 4 V
t
r
, t
TUT
9 V
f
< 10 ns
C
ADJUSTED
+125
25 ms
B
V
AND I
R
SCOPE
C
C