MJ11012G ON Semiconductor, MJ11012G Datasheet - Page 3

• Manufacturer Part Number: MJ11012G
• Description: TRANS DARL NPN 30A 60V TO-3
• Manufacturer: ON Semiconductor
• Type: High Current, Powerr

Specifications of MJ11012G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 30A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 4V @ 300mA, 30A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 20A, 5V
• Power - Max: 200W
• Frequency - Transition: 4MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 60 V
• Maximum Dc Collector Current: 30 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 30 A
• Dc Collector/base Gain Hfe Min: 200, 1000
• Minimum Operating Temperature: - 55 C
• Current, Gain: 200
• Current, Input: 1 A
• Current, Output: 30 A
• Current, Output, Leakage: 1
• Package Type: TO-204AA (TO-3)
• Polarity: NPN
• Primary Type: Si
• Voltage, Collector To Emitter, Saturation: 4 V
• Voltage, Input: 5 V
• Voltage, Output: 60 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJ11012G; MJ11012GOS

a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operations e.g., the transistor must not be subjected to
greater dissipation than the curves indicate.
There are two limitations on the power handling ability of
30 k
20 k
10 k
700
500
300
7 k
5 k
3 k
2 k
5
4
3
2
1
0
0.1
0.3
T
I
C
0.2
J
0.5 0.7
V
T
/I
= 25°C
CE
J
B
= 25°C
= 100
= 5 Vdc
PNP MJ11015
NPN MJ11012, MJ11016
Figure 2. DC Current Gain (1)
PNP MJ11015
NPN MJ11012, MJ11016
0.5
Figure 4. “On” Voltages (1)
I
I
1
C
C
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
1
V
V
2
CE(sat)
BE(sat)
2
3
5
5
10
7
10
20
C
http://onsemi.com
− V
50
20
CE
100
30
3
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
0.005
0.05
0.02
0.01
0.05
0.02
0.01
0.5
0.2
0.1
0.5
0.2
0.1
At high case temperatures, thermal limitations will reduce
50
20
10
2
1
5
2
1
10
2
Figure 5. Active Region DC Safe Operating Area
V
I
T
3
C
J
CE
= 10 mAdc
= 25°C
V
Figure 3. Small−Signal Current Gain
= 3 Vdc
20
CE
BONDING WIRE LIMITATION
THERMAL LIMITATION @ T
SECOND BREAKDOWN LIMITATION
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5
PNP MJ11015
NPN MJ11012, MJ11016
30
7
10
50
f, FREQUENCY (kHz)
MJ11015, MJ11016
70
20
100
MJ11012
C
30
= 25°C
200 300
50
70 100
500
700
1.0 k
200