MJL4281AG ON Semiconductor, MJL4281AG Datasheet - Page 2
MJL4281AG
Manufacturer Part Number
MJL4281AG
Description
TRANS BIPO NPN 15A 350V TO264
Manufacturer
ON Semiconductor
Datasheet
1.MJL4281AG.pdf
(5 pages)
Specifications of MJL4281AG
Transistor Type
NPN
Current - Collector (ic) (max)
15A
Voltage - Collector Emitter Breakdown (max)
350V
Vce Saturation (max) @ Ib, Ic
1V @ 800mA, 8A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5A, 5V
Power - Max
230W
Frequency - Transition
35MHz
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-3BPL
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
350 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
15 A
Power Dissipation
230 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
15 A
Dc Collector/base Gain Hfe Min
80
Maximum Operating Frequency
35 MHz
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJL4281AGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJL4281AG
Manufacturer:
ON
Quantity:
12 500
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
SECOND BREAKDOWN
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector Emitter Sustaining Voltage
Collector Cut−off Current
Collector Cutoff Current
Emitter Cutoff Current
Second Breakdown Collector with Base Forward Biased
DC Current Gain
Collector−Emitter Saturation Voltage
Emitter−Base Saturation Voltage
Base−Emitter ON Voltage
Current−Gain − Bandwidth Product
Output Capacitance
(I
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
C
C
C
C
C
C
C
C
C
C
C
CE
CB
EB
CE
CE
CB
= 50 mA, I
= 100 mAdc, V
= 1.0 Adc, V
= 3.0 Adc, V
= 5.0 Adc, V
= 8.0 Adc, V
= 15 Adc, V
= 8.0 Adc, I
= 8.0 Adc, I
= 8.0 Adc, V
= 1.0 Adc, V
= 5.0 Vdc, I
= 200 V, I
= 350 Vdc, I
= 50 Vdc, t = 1.0 s (non−repetitive)
= 100 Vdc, t = 1.0 s (non−repetitive)
= 10 Vdc, I
B
B
B
B
CE
= 0)
CE
CE
CE
CE
CE
CE
E
= 0)
= 0.8 Adc)
= 0.8 A)
C
E
= 0, f
CE
= 5.0 Vdc)
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f
= 0)
= 5.0 Vdc)
test
= 1.0 MHz)
test
Characteristic
= 1.0 MHz)
(T
MJL4281A (NPN) MJL4302A (PNP)
C
= 25°C unless otherwise noted)
http://onsemi.com
2
Symbol
V
V
V
V
CE(sus)
I
I
I
CE(sat)
BE(sat)
BE(on)
h
C
CEO
CBO
EBO
I
S/b
f
FE
T
ob
Min
350
4.5
1.0
80
80
80
80
50
10
35
−
−
−
−
−
−
Max
100
250
250
250
250
600
5.0
1.0
1.4
1.5
50
−
−
−
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Adc
Vdc
Vdc
Vdc
pF
−