MJL4281AG ON Semiconductor, MJL4281AG Datasheet - Page 3

• Manufacturer Part Number: MJL4281AG
• Description: TRANS BIPO NPN 15A 350V TO264
• Manufacturer: ON Semiconductor

Specifications of MJL4281AG

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 800mA, 8A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5A, 5V
• Power - Max: 230W
• Frequency - Transition: 35MHz
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-3BPL
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 15 A
• Dc Collector/base Gain Hfe Min: 80
• Maximum Operating Frequency: 35 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJL4281AGOS

1000
1000
100
100
1.4
1.2
0.8
0.6
0.4
0.2
10
10
1
0
0.01
0.01
0.01
Figure 3. DC Current Gain, V
Figure 1. DC Current Gain, V
Figure 5. Typical Saturation Voltage,
T
T
J
J
= 100°C
= 100°C
I
I
I
C
0.1
C
C
0.1
0.1
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
T
T
J
J
V
= 25°C
= 25°C
be(sat)
NPN MJL4281A
NPN MJL4281A
NPN MJL4281A
1
1
1
V
ce(sat)
MJL4281A (NPN) MJL4302A (PNP)
TYPICAL CHARACTERISTICS
CE
CE
10
10
10
= 20 V,
= 5 V,
T
I
c
J
/I
= 25°C
b
= 10
http://onsemi.com
100
100
100
3
1000
1000
100
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
10
0.01
0.01
0.01
Figure 4. DC Current Gain, V
Figure 6. Typical Saturation Voltage,
Figure 2. DC Current Gain, V
T
T
J
J
= 100°C
= 100°C
I
C
I
0.1
0.1
I
0.1
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
T
T
J
J
= 25°C
= 25°C
PNP MJL4302A
PNP MJL4302A
PNP MJL4302A
V
be(sat)
1
1
1
V
ce(sat)
CE
CE
10
10
10
= 20 V,
= 5 V,
T
I
c
J
/I
= 25°C
b
= 10
100
100
100