MMST5551-7-F Diodes Inc, MMST5551-7-F Datasheet
MMST5551-7-F
Manufacturer Part Number
MMST5551-7-F
Description
TRANSISTOR NPN 160V SC70-3
Manufacturer
Diodes Inc
Datasheet
1.MMST5551-7.pdf
(3 pages)
Specifications of MMST5551-7-F
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
160V
Vce Saturation (max) @ Ib, Ic
200mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
200mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
MMST5551-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS30173 Rev. 8 - 2
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMST5401)
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking Information: K4N, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
5. Short duration pulse test used to minimize self-heating effect.
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
C
I
h
CBO
EBO
NF
h
f
www.diodes.com
obo
FE
T
fe
Symbol
T
K
J
V
V
V
j
R
, T
1 of 3
P
CBO
CEO
EBO
I
θ JA
B
C
d
STG
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Min
180
160
100
6.0
80
80
30
50
⎯
⎯
⎯
⎯
⎯
⎯
B
C
A
C
G
H
E
Max
0.15
0.20
250
250
300
D
1.0
6.0
8.0
⎯
⎯
⎯
50
50
⎯
⎯
E
E
B C
MHz
Unit
nA
μA
nA
pF
dB
⎯
⎯
V
V
V
V
V
L
-55 to +150
I
I
I
V
V
V
I
I
I
I
I
I
I
V
V
V
V
Value
C
C
E
C
C
C
C
C
C
C
180
160
200
200
625
CB
CB
EB
CB
CE
CE
CE
6.0
= 10mA, I
= 10mA, I
= 100μA, I
= 1.0mA, I
= 10μA, I
= 1.0mA, V
= 10mA, V
= 50mA, V
= 50mA, I
= 50mA, I
= 4.0V, I
= 10V, I
= 5.0V, I
= 120V, I
= 120V, I
= 10V, f = 1.0MHz, I
= 10V, I
M
C
B
B
B
B
C
C
C
C
E
B
= 0
E
E
CE
CE
CE
= 1.0mA
= 1.0mA
= 5.0mA
= 5.0mA
= 1.0mA, f = 1.0kHz
= 10mA, f = 100MHz
= 0
= 0
= 0
= 200μA, R
= 0
= 0, T
Test Condition
MMST5551
= 5.0V
= 5.0V
= 5.0V
A
All Dimens ons in mm
Dim
= 100°C
M
A
B
C
D
G
H
K
E
J
L
α
E
S
= 0
= 1.0kΩ, f = 1.0kHz
SOT-323
°C/W
Unit
mW
© Diodes Incorporated
0.25
1.15
2.00
0.65 Nominal
0.30
1.20
1.80
0.90
0.25
0.10
mA
Min
°C
0.0
V
V
V
0°
i
MMST5551
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
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MMST5551-7-F Summary of contents
Page 1
... I = 1.0mA 50mA 5.0mA 10mA 1.0mA 50mA 5.0mA 10V 1.0MHz ⎯ 10V 1.0mA 1.0kHz CE C MHz V = 10V 10mA 100MHz 5.0V 200μ 1.0kΩ 1.0kHz © Diodes Incorporated Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8° MMST5551 ...
Page 2
... T = 150° 25° -50° 100 1,000 I , COLLECTOR CURRENT (mA) C Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1 10 100 I , COLLECTOR CURRENT (mA) C Fig. 4, Base Emitter Voltage vs. Collector Current MMST5551 © Diodes Incorporated ...
Page 3
... Ordering Information (Note 4 & 6) Device MMST5551-7-F Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 1999 2000 Code J K Month Jan Feb Code 1 2 Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...