MMST5551-7-F Diodes Inc, MMST5551-7-F Datasheet - Page 2

• Manufacturer Part Number: MMST5551-7-F
• Description: TRANSISTOR NPN 160V SC70-3
• Manufacturer: Diodes Inc

Specifications of MMST5551-7-F

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: MMST5551-FDITR

DS30173 Rev. 8 - 2
1,000
1,000
200
150
100
100
100
50
10
10
0
1
1
1
0
1
V
25
CE
= 5V
T = 25°C
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs.
A
I , COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
C
I , COLLECTOR CURRENT (mA)
C
50
Fig. 3, DC Current Gain vs.
Ambient Temperature
Collector Current
75
T = 150°C
Collector Current
A
100 125
10
10
T = -50°C
A
150
Note 1
175
100
100
200
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0.9
0.2
1.0
0.8
0.7
0.6
0.5
0.4
0.3
0.14
0.12
0.09
0.08
0.05
0.15
0.13
0.07
0.06
0.04
0.11
0.10
0.1
1
I
I
C
B
Fig. 2, Collector Emitter Saturation Voltage
= 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Base Emitter Voltage
vs. Collector Current
1
10
vs. Collector Current
T = 150°C
A
T = -50°C
A
10
100
T = 25°C
A
© Diodes Incorporated
100
1,000
MMST5551