BCP68T1G ON Semiconductor, BCP68T1G Datasheet

BCP68T1G

Manufacturer Part Number

BCP68T1G

Description

TRANS NPN AUDIO 1A 25V SOT223

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.BCP68T1G.pdf (4 pages)

2.BCP68T1G.pdf (3 pages)

Specifications of BCP68T1G

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

20V

Vce Saturation (max) @ Ib, Ic

500mV @ 100mA, 1A

Dc Current Gain (hfe) (min) @ Ic, Vce

85 @ 500mA, 1V

Power - Max

1.5W

Frequency - Transition

60MHz

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Configuration

Single Dual Collector

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

25 V

Emitter- Base Voltage Vebo

5 V

Continuous Collector Current

1 A

Maximum Dc Collector Current

1 A

Power Dissipation

1.5 W

Maximum Operating Frequency

60 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

50 at 5 mA at 10 V

Minimum Operating Temperature

- 65 C

Current, Collector

1 A

Current, Gain

Frequency

60 MHz

Package Type

SOT-223

Polarity

NPN

Primary Type

Voltage, Breakdown, Collector To Emitter

20 V

Voltage, Collector To Base

25 V

Voltage, Collector To Emitter

20 V

Voltage, Collector To Emitter, Saturation

0.5 V

Voltage, Emitter To Base

5 V

Number Of Elements

Collector-emitter Voltage

20V

Collector-base Voltage

25V

Emitter-base Voltage

Collector Current (dc) (max)

Dc Current Gain (min)

Frequency (max)

60MHz

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

3 +Tab

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

BCP68T1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BCP68T1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

BCP68T1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

BCP68T1G

Quantity:

1 000

Company:

H&T Electronics

Part Number:

BCP68T1G

Quantity:

5 000

Current page: 1 of 4
Download datasheet (129Kb)

BCP68T1G

NPN Silicon

Epitaxial Transistor

voltage, high current applications. The device is housed in the

SOT- -223 package, which is designed for medium power surface

mount applications.

Features



Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.

 Semiconductor Components Industries, LLC, 2010

September, 2010 - - Rev. 6

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector--Emitter Voltage

Collector--Base Voltage

Emitter--Base Voltage

Collector Current

Total Power Dissipation @ T

(Note 1)

Derate above 25C

Operating and Storage Temperature

Range

Thermal Resistance,

Junction--to--Ambient (Surface Mounted)

Lead Temperature for Soldering,

0.0625 in from case

Time in Solder Bath

This NPN Silicon Epitaxial Transistor is designed for use in low

thermal conduction, and allows visual inspection of soldered joints.

The formed leads absorb thermal stress during soldering, eliminating

the possibility of damage to the die

Compliant

High Current: I

The SOT- -223 Package Can Be Soldered Using Wave or Reflow

SOT- -223 package ensures level mounting, resulting in improved

The PNP Complement is BCP69T1

These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS

x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

Characteristic

Rating

= 1.0 A

= 25C unless otherwise noted)

= 25C

Symbol

CEO

CBO

, T

EBO

θJA

stg

-- 65 to 150

Value

Max

83.3

260

5.0

1.0

1.5

mW/C

C/W

Unit

Vdc

Adc

Sec

C

†For information on tape and reel specifications,

BCP68T1G

BCP68T3G

MEDIUM POWER NPN SILICON

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

HIGH CURRENT TRANSISTOR

Device

(Note: Microdot may be in either location)

ORDERING INFORMATION

CA = Specific Device Code

SURFACE MOUNT

BASE

http://onsemi.com

COLLECTOR 2,4

= Assembly Location

= Year

= Work Week

= Pb--Free Package

(Pb--Free)

SOT--223

Package

CASE 318E

SOT- -223

STYLE 1

EMITTER 3

Publication Order Number:

1000/Tape & Reel

4000/Tape & Reel

Shipping

MARKING

DIAGRAM

BCP68T1/D

AYW

CA G

†

Related parts for BCP68T1G

BCP68T1G Summary of contents

Page 1

... Symbol Max Unit 83.3 R C/W θJA T 260  Sec BCP68T1G BCP68T3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com SURFACE MOUNT COLLECTOR 2,4 BASE 1 EMITTER 3 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Collector--Emitter Breakdown Voltage (I = 100 mAdc Collector--Emitter Breakdown Voltage (I = 1.0 mAdc Emitter--Base Breakdown Voltage ( mAdc Collector--Base Cutoff Current ( Vdc, I ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 1 25 0.8 BE(sat 0 1.0 V BE(on) CE 0.4 0 CE(sat 1.0 ...

Page 4

... A1 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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