AP502 TriQuint, AP502 Datasheet

AP502

Manufacturer Part Number

AP502

Description

RF Amplifier 2110-2170MHz 30dB Gain

Manufacturer

TriQuint

Type

Power Amplifierr

Datasheet

1.AP502-PCB.pdf (5 pages)

Specifications of AP502

Operating Frequency

2110 MHz to 2170 MHz

Operating Supply Voltage

12 V

Supply Current

840 mA

Maximum Operating Temperature

+ 85 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 40 C

Number Of Channels

1 Channel

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

AP502

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

AP502KTR-G1

Quantity:

28 056

Current page: 1 of 5
Download datasheet (853Kb)

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com

Product Features

•

Applications

•

Specifications

1. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±5 MHz offset.

2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±10 MHz offset.

3. Pull-down voltage: 0V = “OFF”, 5V=”ON”

Absolute Maximum Rating

Operation of this device above any of these parameters may cause permanent damage.

25 ºC, V

Parameter

Operational Bandwidth

Test Frequency

Power Gain

wCDMA ACLR1 @ 25dBm

wCDMA ACLR2 @ 25dBm

Input Return Loss

Output Return Loss

Output P1dB

Output IP3

Operating Current @ 25 dBm

Quiescent Current, Icq

Device Voltage, Vcc

Device Voltage, Vpd

Load Stability

Parameter

Operating Case Temperature

Storage Temperature

RF Input Power (continuous)

2110 – 2170 MHz

30 dB Gain

+36 dBm P1dB

-55 dBc ACLR

+12 V Single Supply

Power Down Mode

Bias Current Adjustable

RoHS-compliant flange-mount pkg

Final stage amplifiers for repeaters

Optimized for driver amplifier

PA mobile infrastructure

with output terminated in 50 Ω

@ 25 dBm wCDMA linear power

=12V, V

AP502

UMTS-band 4W HBT Amplifier Module

=5V, I

(3)

=820mA, R7=0Ω, 50Ω unmatched fixture

(1)

(2)

Units Min

VSWR

MHz

dBm

dBc

Rating

-40 to +85 °C

-55 to +150 °C

+15 dBm

The AP502 is a high dynamic range power amplifier in a

RoHS-compliant flange-mount package.

amplifier module has 30 dB gain, while being able to achieve

high performance for UMTS-band applications with +36

dBm of compressed 1dB power. The module has been

internally optimized for driver applications provide -55 dBc

ACLR at 25 for wCDMA applications. The module can be

biased down for current when higher efficiency is required.

The AP502 uses a high reliability InGaP/GaAs HBT process

technology and does not require any external matching

components. The module operates off a +12V supply and

does not requiring any negative biasing voltages; an internal

active bias allows the amplifier to maintain high linearity

over temperature. It has the added feature of a +5V power

down control pin. A low-cost metal housing allows the

device to have a low thermal resistance to ensure long

lifetimes. All devices are 100% RF and DC tested.

The AP502 is targeted for use as a driver or final stage amplifier

in wireless infrastructure where high linearity and high power is

required. This combination makes the device an excellent

candidate for next generation multi-carrier 3G base stations.

28.5

10:1

790

780

2110 – 2170

Typ Max

2140

Product Description

+36

+52

+12

840

820

-55

-68

5.3

34.5

940

920

-50

-53

Typical Performance

4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet.

Ordering Information

Parameter

Operating Current @ 25 dBm

Quiescent Current, Icq

Device Voltage, Vcc

R7 value

Test Frequency

Power Gain

wCDMA ACLR1 @ 25dBm

Input Return Loss

Output Return Loss

Output P1dB

Output IP3

Part No.

AP502

AP502-PCB

Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture.

Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet.

Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=250mA, R7=730Ω, 50Ω tuned fixture.

The multi-stage

Specifications and information are subject to change without notice

Description

UMTS-band 4W HBT Amplifier Module

Fully-Assembled Evaluation Board

(Class AB configuration, Icq=820mA)

(2)

Functional Diagram

Units Config1 Config2

MHz

dBm

dBc

Ω

Product Information

(4)

Pin No.

Case

2 / 4

3 / 5

Top View

2140

840

820

+12

+36

+52

-55

5.3

RF Output

Function

RF Input

Page 1 of 5 July 2008

Ground

Vpd

Vcc

-47.5

2140

27.7

420

250

+12

730

+36

+50

Related parts for AP502

AP502 Summary of contents

Page 1

... A low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes. All devices are 100% RF and DC tested. The AP502 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations ...

Page 2

... Performance Graphs – Class AB Configuration (AP502-PCB) The AP502-PCB and AP502 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for the amplifier is set at 0 Ω in this configuration. Increasing that value will decrease the quiescent and operating current of the amplifier module, as described on the next page ...

Page 3

... The AP502 can be adjusted to operate at lower current biasing levels by modifying the R7 resistor for improved efficiency performance. The configuration shown on this page has the AP502 operating with Icq = 250 mA (Icc = 400 dBm). Output L-C matching components have been added externally on the circuit to optimize the amplifier for ACPR performance at this biasing configuration ...

Page 4

... AP502 UMTS-band 4W HBT Amplifier Module The MTTF of the AP502 can be calculated by first determining how much power is being dissipated by the amplifier module. Because the device’s intended application power amplifier pre-driver or final stage output amplifier, the output RF power of the amplifier will help lower the overall power dissipation ...

Page 5

... Outline Drawing The device will be marked with an “AP502” designator with an alphanumeric lot code on the top surface of the package noted as “ABCD” on the drawing. manufacturing date will also be printed as “XXYY”, where the “XX” represents the week number from 1 – 52. ...

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