AP502 TriQuint, AP502 Datasheet - Page 3

• Manufacturer Part Number: AP502
• Description: RF Amplifier 2110-2170MHz 30dB Gain
• Manufacturer: TriQuint
• Type: Power Amplifierr

Specifications of AP502

• Operating Frequency: 2110 MHz to 2170 MHz
• Operating Supply Voltage: 12 V
• Supply Current: 840 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com, www.TriQuint.com
The AP502 can be adjusted to operate at lower current biasing levels by modifying the R7 resistor for improved efficiency
performance. The configuration shown on this page has the AP502 operating with Icq = 250 mA (Icc = 400 mA @ 27 dBm).
Output L-C matching components have been added externally on the circuit to optimize the amplifier for ACPR performance at
this biasing configuration.
RF IN
31
30
29
28
27
26
-40
-50
-60
-70
2110
20
+25 °C, 3GPP W-CDMA, Test Model 1+32 DPCH, 1960 MHz, Icq=250mA
AP502
UMTS-band 4W HBT Amplifier Module
21
DNP
±5 MHz
±10 MHz
Narrowband S-Parameters
Output Channel Power (dBm)
2130
22
ACLR vs. Channel Power
Frequency (MHz)
0Ω
+25 °C, Icq=275mA
DNP
DNP
23
S21
DNP
24
2150
0Ω
Performance Graphs – Class B Configuration
S11
25
26
S22
DNP
6
2170
100pF
.01μF
27
5
0
-5
-10
-15
-20
5
28
4
3
-20
-40
-20
-30
-40
-50
-60
730Ω
40
20
2
0
20
0
DNP
DNP
1
IMD3, IMD5, OIP3 vs. Ouptut Power
IMD3L
IMD3U
IMD5
OIP3
S21
S11
S22
500
22
Output Power per tone (dBm)
2140 MHz, +25 °C, Icq=275mA
10μF
Wideband S-Parameters
24
1000
Frequency (MHz)
+25 °C, Icq=275mA
DNP
26
1500
2.2nH
100pF
.01μF
28
2000
30
DNP
RF OUT
2500
32
60
50
40
30
20
3000
Notes:
1. Please note that for reliable operation, the evaluation board will have to
2. The area around the module underneath the PCB should not contain any
3. For proper and safe operation in the laboratory, the power-on sequencing
Specifications and information are subject to change without notice
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
soldermask in order to maintain good RF grounding.
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
38
36
34
32
30
28
800
700
600
500
400
300
-2
22
Gain / Output Power vs. Input Power
0
24
Icc
PAE / Icc vs. Output Power
2140 MHz, +25 °C, Icq=275mA
2140 MHz, +25 °C, Icq=275mA
Output Power (dBm)
Input Power (dBm)
2
Product Information
26
PAE
4
28
6
30
Page 3 of 5 July 2008
32
8
Pout
Gain
10
34
30
29
28
27
26
25
25
20
15
10
5
0