ZXTN2010GTA Diodes Zetex, ZXTN2010GTA Datasheet - Page 2
ZXTN2010GTA
Manufacturer Part Number
ZXTN2010GTA
Description
TRANS NPN LO SAT 60V 6A SOT223
Manufacturer
Diodes Zetex
Datasheet
1.ZXTN2010GTA.pdf
(6 pages)
Specifications of ZXTN2010GTA
Transistor Type
NPN
Current - Collector (ic) (max)
6A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
260mV @ 300mA, 6A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 2A, 1V
Power - Max
3W
Frequency - Transition
130MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
ZXTN2010GTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
ABSOLUTE MAXIMUM RATINGS
ZXTN2010G
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to ambient
S E M I C O N D U C T O R S
(a)
A
A
=25°C
=25°C
(a)
(a)
(b)
SYMBOL
R
2
SYMBOL
BV
BV
BV
I
I
P
P
T
JA
C
CM
D
D
j
, T
CBO
CEO
EBO
stg
-55 to +150
VALUE
42
LIMIT
12.8
150
3.0
1.6
60
20
24
7
6
ISSUE 2 - MAY 2006
mW/°C
mW/°C
UNIT
°C/W
UNIT
°C
W
W
V
V
V
A
A