ZXTN2010GTA Diodes Zetex, ZXTN2010GTA Datasheet - Page 4

TRANS NPN LO SAT 60V 6A SOT223

ZXTN2010GTA

Manufacturer Part Number
ZXTN2010GTA
Description
TRANS NPN LO SAT 60V 6A SOT223
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXTN2010GTA

Transistor Type
NPN
Current - Collector (ic) (max)
6A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
260mV @ 300mA, 6A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 2A, 1V
Power - Max
3W
Frequency - Transition
130MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
ZXTN2010GTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXTN2010GTA
Manufacturer:
DIODES
Quantity:
10 000
Company:
Part Number:
ZXTN2010GTA
Quantity:
5 000
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
ZXTN2010G
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
S E M I C O N D U C T O R S
SYMBOL
BV
BV
BV
BV
I
I
R
I
V
V
V
H
f
C
t
t
CBO
CER
EBO
T
ON
OFF
amb
CE(SAT)
BE(SAT)
BE(ON)
FE
OBO
CBO
CER
CEO
EBO
1k
= 25°C unless otherwise stated)
300 s; duty cycle
4
MIN.
150
150
100
100
60
55
20
7
1000
TYP.
190
190
940
200
130
100
210
200
105
760
8.1
80
20
31
42
45
50
40
2%.
MAX. UNIT CONDITIONS
1100
1050
100
135
260
300
0.5
0.5
50
10
30
60
70
MHz I
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
V
V
V
V
A
A
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
C
C
C
C
C
C
C
E
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
=1A, I
=1A, I
=2A, I
=6A, I
=2A, V
=5A, V
=10A, V
=100 A
=100 A
=1 A, RB 1k
=10mA*
=100mA, I
=6A, I
=6A, V
=10mA, V
=100mA, V
=1A, V
=I
=120V,T
=120V,T
=6V
=120V
=120V
=10A, f=1MHz*
B2
ISSUE 2 - MAY 2006
=100mA
B
B
B
B
CE
CE
B
=100mA*
=50mA*
=50mA*
=300mA*
CE
CC
CE
=300mA*
=1V*
=1V*
=1V*
=1V*
=10V,
amb
amb
CE
B
CE
=5mA*
=1V*
=100 C
=100 C
=10V

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