BC857CW,135 NXP Semiconductors, BC857CW,135 Datasheet
BC857CW,135
Specifications of BC857CW,135
BC857CW /T3
BC857CW /T3
Related parts for BC857CW,135
BC857CW,135 Summary of contents
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DATA SHEET dbook, halfpage BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 12 DISCRETE SEMICONDUCTORS M3D102 2002 Feb 04 ...
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... NXP Semiconductors PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC846W, BC847W and BC848W. MARKING TYPE NUMBER BC856W ...
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... NXP Semiconductors PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BC856W BC857W BC858W V collector-emitter voltage CEO BC856W BC857W BC858W V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...
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... NXP Semiconductors PNP general purpose transistors CHARACTERISTICS = 25 °C; unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE BC856W BC857W; BC858W BC856AW; BC857AW BC856BW; BC857BW BC857CW V collector-emitter saturation voltage CEsat V base-emitter saturation voltage BEsat ...
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... NXP Semiconductors PNP general purpose transistors 500 handbook, halfpage h FE 400 (1) 300 (2) 200 (3) 100 0 −2 −1 −10 −10 −1 −10 = −5 V. BC857AW 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. ...
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... NXP Semiconductors PNP general purpose transistors 1000 handbook, halfpage h FE 800 600 (1) 400 (2) 200 (3) 0 −2 −1 −10 −10 −1 −10 = −5 V. BC857BW 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 DC current gain as a function of collector current; typical values. ...
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... NXP Semiconductors PNP general purpose transistors 1000 handbook, halfpage h FE (1) 800 600 (2) 400 (3) 200 0 −2 −1 −10 −10 −1 −10 = −5 V. BC857CW 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.10 DC current gain as a function of collector current; typical values. ...
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... NXP Semiconductors PNP general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 2002 Feb scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...