BCW33,215 NXP Semiconductors, BCW33,215 Datasheet - Page 6

• Manufacturer Part Number: BCW33,215
• Description: TRANSISTOR NPN 32V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCW33,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 210mV @ 2.5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 420
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 32 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933099650215; BCW33 T/R; BCW33 T/R

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
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R75/05/pp6
Date of release: 2004 Feb 06
Document order number: 9397 750 12404