BCP55-10,115 NXP Semiconductors, BCP55-10,115 Datasheet - Page 8
![TRANSISTOR NPN 60V 1A SOT223](/photos/1/39/13965/568-sot-223_sc-73_sot223-1_sml.jpg)
BCP55-10,115
Manufacturer Part Number
BCP55-10,115
Description
TRANSISTOR NPN 60V 1A SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BCP55-16115.pdf
(15 pages)
Specifications of BCP55-10,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
63 @ 150mA, 2V
Power - Max
960mW
Frequency - Transition
180MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
960 mW
Maximum Operating Frequency
180 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933917220115
BCP55-10 T/R
BCP55-10 T/R
BCP55-10 T/R
BCP55-10 T/R
NXP Semiconductors
BC637_BCP55_BCX55_7
Product data sheet
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
10
3
2
10
FR4 PCB, standard footprint
typical values
FR4 PCB, mounting pad for collector 1 cm
typical values
5
duty cycle =
5
duty cycle =
1
0.5
0.2
0.1
0.05
0.02
0.01
0
0.75
0.33
0.05
0.02
0.01
1.0
0.5
0.2
0.1
0
0.75
0.33
10
10
4
4
10
10
3
3
2
10
10
2
2
Rev. 07 — 25 June 2007
10
10
1
1
BC637; BCP55; BCX55
1
1
60 V, 1 A NPN medium power transistors
10
10
10
10
2
2
© NXP B.V. 2007. All rights reserved.
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t
p
p
006aaa815
006aaa090
(s)
(s)
10
10
3
3
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