BCP55-10,115 NXP Semiconductors, BCP55-10,115 Datasheet - Page 9
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BCP55-10,115
Manufacturer Part Number
BCP55-10,115
Description
TRANSISTOR NPN 60V 1A SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BCP55-16115.pdf
(15 pages)
Specifications of BCP55-10,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
63 @ 150mA, 2V
Power - Max
960mW
Frequency - Transition
180MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
960 mW
Maximum Operating Frequency
180 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933917220115
BCP55-10 T/R
BCP55-10 T/R
BCP55-10 T/R
BCP55-10 T/R
NXP Semiconductors
7. Characteristics
BC637_BCP55_BCX55_7
Product data sheet
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB, mounting pad for collector 6 cm
typical values
5
duty cycle =
0.75
0.33
0.05
0.02
0.01
1.0
0.5
0.2
0.1
0
10
4
Table 8.
T
[1]
Symbol
I
I
h
V
V
C
f
CBO
EBO
T
amb
FE
CEsat
BE
c
Pulse test: t
= 25 C unless otherwise specified.
10
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
transition frequency
Characteristics
3
h
h
p
FE
FE
selection -10
selection -16
300 s; = 0.02.
2
10
2
Rev. 07 — 25 June 2007
10
Conditions
V
V
T
V
V
V
I
V
V
f = 1 MHz
V
f = 100 MHz
C
1
j
CB
CB
EB
CE
CE
CE
CB
CE
I
I
I
I
I
= 150 C
= 500 mA; I
C
C
C
C
C
= 30 V; I
= 30 V; I
= 5 V; I
= 2 V
= 2 V
= 2 V; I
= 10 V; I
= 5 V; I
= 5 mA
= 150 mA
= 500 mA
= 150 mA
= 150 mA
BC637; BCP55; BCX55
C
C
C
1
E
E
E
= 0 A
= 500 mA
= 50 mA;
60 V, 1 A NPN medium power transistors
B
= i
= 0 A
= 0 A;
= 50 mA
e
= 0 A;
10
[1]
[1]
[1]
Min
-
-
-
63
63
40
63
100
-
-
-
100
10
Typ
-
-
-
-
-
-
-
-
-
-
6
180
2
© NXP B.V. 2007. All rights reserved.
t
p
006aaa816
(s)
Max
100
10
100
-
250
-
160
250
500
1
-
-
10
3
Unit
nA
nA
mV
V
pF
MHz
A
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