BSP43,115 NXP Semiconductors, BSP43,115 Datasheet - Page 3

• Manufacturer Part Number: BSP43,115
• Description: TRANS NPN 60V 1A SOT-223
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BSP43,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 1.3W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933982030115; BSP43 T/R; BSP43 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 26
R
R
I
I
h
V
V
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
NPN medium power transistors
th j-a
th j-s
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
transition frequency
p
≤ 300 μs; δ ≤ 0.01.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
IC = 150 mA; IB = 15 mA; note 1
I
I
E
E
C
C
C
C
C
C
C
C
= 0; V
= 0; V
= 0; V
= 100 μA; V
= 100 mA; V
= 500 mA; V
= 150 mA; I
= 500 mA; I
= 500 mA; I
= 50 mA; V
3
CB
CB
EB
= 60 V
= 60 V; T
= 5 V
CONDITIONS
CE
B
B
B
CE
CE
CE
= 15 mA; note 1
= 50 mA; note 1
= 50 mA; note 1
= 10 V; f = 100 MHz
= 5 V; note 1
= 5 V; note 1
= 5 V; note 1
j
note 1
= 150 °C
CONDITIONS
−
−
−
30
100
50
−
−
−
−
100
MIN.
VALUE
BSP41; BSP43
93
12
Product data sheet
100
50
100
−
300
−
0.25
0.5
1
1.2
−
MAX.
UNIT
K/W
K/W
2
nA
μA
nA
V
V
V
V
MHz
.
UNIT