MJE243G ON Semiconductor, MJE243G Datasheet - Page 3

• Manufacturer Part Number: MJE243G
• Description: TRANS PWR NPN 4A 100V TO225AA
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJE243G

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 200mA, 1V
• Power - Max: 1.5W
• Frequency - Transition: 40MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 15 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Frequency: 40 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 4 A
• Current, Gain: 15
• Frequency: 40 MHz
• Package Type: TO-225
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 8.34 °C/W
• Voltage, Breakdown, Collector To Emitter: 100 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 0.6 V
• Voltage, Emitter To Base: 7 V
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 7V
• Collector Current (dc) (max): 4A
• Dc Current Gain (min): 40
• Frequency (max): 40MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJE243GOS

+11 V
0
DUTY CYCLE = 1.0%
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
- 9.0 V
t
0.02
r
, t
f
≤ 10 ns
R
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
B
0 (SINGLE PULSE)
Figure 2. Switching Time Test Circuit
D
and R
1
0.05
1N5825 USED ABOVE I
MSD6100 USED BELOW I
25 ms
MUST BE FAST RECOVERY TYPE, e.g.:
D = 0.5
C
0.2
0.05
VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.1
0.01
51
0.1
0.02
R
B
B
8.0
4.0
16
12
≈ 100 mA
B
0
20
≈ 100 mA
- 4 V
0.2
D
1
40
+ 30 V
V
CC
0.5
R
Figure 1. Power Derating
C
60
Figure 4. Thermal Response
http://onsemi.com
T, TEMPERATURE (°C)
SCOPE
1.0
80
t, TIME (ms)
3
100
2.0
500
300
200
100
q
q
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
1K
50
30
20
10
JC
JC
J(pk)
5
3
2
1
0.01
(t) = r(t) q
= 8.34°C/W MAX
- T
120
C
0.02
NPN MJE243
PNP MJE253
= P
JC
0.03 0.05
5.0
(pk)
1
140
q
JC
I
C
(t)
Figure 3. Turn−On Time
, COLLECTOR CURRENT (AMPS)
10
0.1
160
t
r
t
1.6
1.2
0.8
0.4
0
d
0.2
20
0.3
P
(pk)
DUTY CYCLE, D = t
0.5
t
1
1
t
2
50
V
I
T
C
J
CC
/I
= 25°C
B
2
= 30 V
= 10
3
1
/t
100
2
5
10
200