MJD45H11-1G ON Semiconductor, MJD45H11-1G Datasheet - Page 4

• Manufacturer Part Number: MJD45H11-1G
• Description: TRANS PWR PNP 8A 80V STR DPAK-3
• Manufacturer: ON Semiconductor

Specifications of MJD45H11-1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 1.75W
• Frequency - Transition: 90MHz
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 8A
• Dc Current Gain (min): 60
• Power Dissipation: 1.75W
• Frequency (max): 90MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: IPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJD45H11-1GOS

1000
1000
0.01
100
100
0.1
10
10
0.01
0.01
1
0.1
I
C
150°C
-40°C
150°C
-40°C
25°C
25°C
/I
B
Figure 8. MJD44H11 Saturation Voltage
= 10
Figure 4. MJD44H11 DC Current Gain
Figure 6. MJD44H11 DC Current Gain
I
I
-40°C
I
C
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
0.1
0.1
150°C
V
CE(sat)
1
25°C
1
1
V
V
CE
CE
http://onsemi.com
= 1 V
= 4 V
10
10
10
4
1000
1000
100
0.01
100
10
0.1
10
0.01
0.01
1
0.1
I
150°C
-40°C
C
150°C
-40°C
25°C
25°C
/I
Figure 9. MJD45H11 Saturation Voltage
B
= 10
Figure 5. MJD45H11 DC Current Gain
Figure 7. MJD45H11 DC Current Gain
I
I
-40°C
C
I
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
0.1
0.1
150°C
V
CE(sat)
1
25°C
1
1
V
V
CE
CE
= 1 V
= 4 V
10
10
10