MJD45H11-1G ON Semiconductor, MJD45H11-1G Datasheet - Page 5

TRANS PWR PNP 8A 80V STR DPAK-3

MJD45H11-1G

Manufacturer Part Number
MJD45H11-1G
Description
TRANS PWR PNP 8A 80V STR DPAK-3
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJD45H11-1G

Transistor Type
PNP
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1V @ 400mA, 8A
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 4A, 1V
Power - Max
1.75W
Frequency - Transition
90MHz
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
80V
Emitter-base Voltage
5V
Collector Current (dc) (max)
8A
Dc Current Gain (min)
60
Power Dissipation
1.75W
Frequency (max)
90MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJD45H11-1GOS

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJD45H11-1G
Manufacturer:
ON
Quantity:
12 500
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Part Number:
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Company:
Part Number:
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Quantity:
200
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
1
0.1
I
C
/I
B
Figure 10. MJD44H11 Saturation Voltage
= 10
-40°C
I
C
, COLLECTOR CURRENT (AMPS)
25°C
150°C
V
BE(sat)
1
http://onsemi.com
10
5
1.2
0.7
0.6
1.1
0.9
0.8
0.5
0.4
1
0.1
I
C
/I
B
Figure 11. MJD45H11 Saturation Voltage
= 10
-40°C
I
C
, COLLECTOR CURRENT (AMPS)
25°C
150°C
V
BE(sat)
1
10

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