2N6427 ON Semiconductor, 2N6427 Datasheet
2N6427
Specifications of 2N6427
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2N6427 Summary of contents
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... Preferred Device Darlington Transistors NPN Silicon Features Pb−Free Packages are Available** Device Marking: Device Type, e.g., 2N6426, Date Code MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous ...
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... Vdc 100 MHz Output Admittance ( mAdc 5.0 Vdc 1.0 kHz Noise Figure (I = 1.0 mAdc 5.0 Vdc 100 kW 1.0 kHz Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. 2N6426*, 2N6427 ( unless otherwise noted) A Symbol V (BR)CEO V (BR)CBO V (BR)EBO 2N6426 2N6427 2N6426 2N6427 ...
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... FREQUENCY (Hz) Figure 2. Noise Voltage 200 BANDWIDTH = 15.7 kHz 100 = 100 1 1.0 2.0 5 100 R , SOURCE RESISTANCE (kW) S Figure 4. Total Wideband Noise Voltage 2N6426*, 2N6427 IDEAL TRANSISTOR Figure 1. Transistor Noise Model NOISE CHARACTERISTICS (V = 5.0 Vdc 2.0 1.0 0.7 0 0.3 0.2 0.1 0.07 0.05 ...
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... J 1 1000 BE(sat 1 5.0 V BE(on) CE 1.0 0 1000 CE(sat 0.6 5.0 7 100 200 300 I , COLLECTOR CURRENT (mA) C Figure 10. “On” Voltages 2N6426*, 2N6427 4 5 100 MHz 2 ibo 1.0 C 0.8 obo 0.6 0.4 0.2 4 0.5 1.0 Figure 7. High Frequency Current Gain 3.0 2 2.0 1 ...
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... Figure 13. Active Region Safe Operating Area ORDERING INFORMATION Device 2N6426 2N6426G 2N6426RLRA 2N6427 2N6427RLRA 2N6427RLRAG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2N6426*, 2N6427 5 100 t, TIME (ms) Figure 12. Thermal Response 1 ...
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... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com 2N6426*, 2N6427 PACKAGE DIMENSIONS TO−92 TO−226AA CASE 29−11 ...