2N6427 ON Semiconductor, 2N6427 Datasheet - Page 3

• Manufacturer Part Number: 2N6427
• Description: TRANS SS DARL NPN 500MA 40V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N6427

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 500µA, 500mA
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: 2N6427OS

500
200
100
200
100
5.0
50
20
10
70
50
30
20
10
10
1.0
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
20
2.0
= 10 mA
Figure 4. Total Wideband Noise Voltage
100 mA
1.0 mA
50 100 200
5.0
Figure 2. Noise Voltage
R
S
, SOURCE RESISTANCE (kW)
10
f, FREQUENCY (Hz)
500 1 k 2 k
20
BANDWIDTH = 1.0 Hz
R
S
0
50
I
C
= 1.0 mA
100 mA
100
5 k 10 k 20 k
R
S
200
NOISE CHARACTERISTICS
10 mA
(V
Figure 1. Transistor Noise Model
e
CE
2N6426*, 2N6427
n
http://onsemi.com
500
50 k 100 k
= 5.0 Vdc, T
i
n
1000
3
TRANSISTOR
0.07
0.03
0.02
0.05
2.0
1.0
0.7
0.5
0.3
0.2
0.1
8.0
6.0
4.0
2.0
A
14
12
10
IDEAL
0
= 25 C)
10 20
1.0
I
C
2.0
= 1.0 mA
50 100 200
Figure 5. Wideband Noise Figure
5.0
Figure 3. Noise Current
R
S
, SOURCE RESISTANCE (kW)
10
f, FREQUENCY (Hz)
100 mA
500 1 k 2 k
I
C
20
10 mA
100 mA
= 1.0 mA
BANDWIDTH = 10 Hz TO 15.7 kHz
BANDWIDTH = 1.0 Hz
10 mA
50
100
5 k 10 k 20 k
200
500
50 k 100 k
1000