MMBT2222ALT1 ON Semiconductor, MMBT2222ALT1 Datasheet - Page 2

• Manufacturer Part Number: MMBT2222ALT1
• Description: TRANS SS GP NPN 40V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT2222ALT1

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 225mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Power Dissipation Pd: 300mW
• Dc Collector Current: 600mA
• Dc Current Gain Hfe: 300
• Peak Reflow Compatible (260 C): No
• Leaded Process Compatible: No
• C-e Breakdown Voltage: 40V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT2222ALT1OSCT

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
Collector −Base Breakdown Voltage (I
Emitter −Base Breakdown Voltage (I
Collector Cutoff Current (V
Collector Cutoff Current (V
Emitter Cutoff Current (V
Base Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (Note 4)
Base −Emitter Saturation Voltage (Note 4)
(I
Current −Gain − Bandwidth Product (Note 5)
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small −Signal Current Gain
Output Admittance
C
= 500 mAdc, I
MMBT2222A
MMBT2222A
MMBT2222A
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
CB
CB
EB
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 10 mAdc, V
= 150 mAdc, V
= 150 mAdc, V
= 500 mAdc, V
= 150 mAdc, I
= 500 mAdc, I
= 150 mAdc, I
= 20 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 0.5 Vdc, I
= 60 Vdc, I
= 50 Vdc, I
= 60 Vdc, I
= 10 Vdc, I
B
= 50 mAdc)
CE
EB
= 60 Vdc, V
CE
CB
E
E
E
E
CE
CE
CE
C
CE
CE
CE
CE
B
B
B
CE
CE
CE
CE
CE
CE
= 3.0 Vdc, I
= 0)
= 0, T
= 0, T
CE
CE
CE
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 15 mAdc)
= 50 mAdc)
= 15 mAdc)
= 60 Vdc, V
= 50 Vdc, I
= 10 Vdc)
= 10 Vdc, T
= 20 Vdc, f = 100 MHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc) (Note 4)
= 1.0 Vdc) (Note 4)
= 10 Vdc) (Note 4)
A
A
Characteristic
= 125°C)
= 125°C)
E
EB(off)
C
= 10 mAdc, I
C
C
= 10 mAdc, I
E
= 0)
EB(off)
(T
= 10 mAdc, I
A
= 0)
A
= −55°C)
= 3.0 Vdc)
= 25°C unless otherwise noted)
= 3.0 Vdc)
C
E
= 0)
= 0)
B
= 0)
http://onsemi.com
MMBT2222A only
2
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222
MMBT2222
MMBT2222
MMBT2222
MMBT2222
MMBT2222
MMBT2222
MMBT2222
MMBT2222
MMBT2222
MMBT2222
MMBT2222
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
C
I
C
h
CEX
CBO
EBO
h
I
h
h
h
BL
f
obo
FE
ibo
oe
T
ie
re
fe
0.25
Min
100
250
300
5.0
6.0
0.6
2.0
5.0
30
40
60
75
35
50
75
35
50
30
40
50
75
25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.01
0.01
1.25
100
300
300
375
200
0.4
0.3
1.6
1.0
1.3
1.2
2.6
2.0
8.0
8.0
8.0
4.0
10
10
10
20
30
25
35
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
X 10
mmhos
nAdc
mAdc
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW
pF
pF
−
−
− 4