MMBT2222ALT1 ON Semiconductor, MMBT2222ALT1 Datasheet - Page 5

• Manufacturer Part Number: MMBT2222ALT1
• Description: TRANS SS GP NPN 40V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT2222ALT1

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 225mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Power Dissipation Pd: 300mW
• Dc Collector Current: 600mA
• Dc Current Gain Hfe: 300
• Peak Reflow Compatible (260 C): No
• Leaded Process Compatible: No
• C-e Breakdown Voltage: 40V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT2222ALT1OSCT

7.0
5.0
3.0
2.0
0.01
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
30
20
10
0.1
0.1
1
0.001
0.001
Figure 11. Collector Emitter Saturation Voltage
Figure 13. Base Emitter Voltage vs. Collector
25°C
V
0.2 0.3 0.5 0.7
CE
I
C
−55°C
150°C
25°C
/I
−55°C
= 1 V
B
= 10
I
I
C
C
Figure 9. Capacitances
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
REVERSE VOLTAGE (VOLTS)
vs. Collector Current
0.01
0.01
1.0
Current
2.0 3.0 5.0 7.0 10
C
eb
0.1
0.1
150°C
20 30
C
cb
http://onsemi.com
50
1
1
5
300
200
100
500
70
50
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
+0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.0
0
0.1
0.001
Figure 10. Current−Gain Bandwidth Product
Figure 12. Base Emitter Saturation Voltage vs.
0.2
I
2.0
C
−55°C
150°C
/I
25°C
Figure 14. Temperature Coefficients
B
V
T
0.5
= 10
CE
J
3.0
= 25°C
I
= 20 V
I
C
C
, COLLECTOR CURRENT (mA)
1.0 2.0
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0
0.01
Collector Current
5.0
10
R
R
10
qVC
qVB
for V
for V
20
20
0.1
CE(sat)
BE
30
50
100 200
50
70 100
500
1