MMBTA06LT1 ON Semiconductor, MMBTA06LT1 Datasheet - Page 3

• Manufacturer Part Number: MMBTA06LT1
• Description: TRANS DRIVER SS NPN 80V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBTA06LT1

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Dc: 0528
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMBTA06LT1OSCT

1.0 k
700
500
300
200
100
300
200
100
0.01
70
50
30
20
10
70
50
30
0.1
2.0
5.0 7.0
1
Figure 2. Current−Gain — Bandwidth Product
0.001
V
I
I
T
Figure 6. Collector Emitter Saturation Voltage
C
B1
CC
J
V
T
/I
3.0
= 25°C
CE
J
B
= I
I
= 25°C
= 40 V
C
= 10
B2
/I
= 2.0 V
10
B
= 10
5.0 7.0 10
Figure 4. Switching Time
I
I
I
C
C
C
20
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (A)
vs. Collector Current
t
d
0.01
@ V
30
BE(off)
20
50
= 0.5 V
70
30
25°C
100
0.1
50
70
200
150°C
100
t
t
t
s
f
r
300
http://onsemi.com
−55°C
200
500
1
3
400
200
100
8.0
6.0
4.0
80
60
40
20
10
80
60
40
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.5
0.0001
−55°C
150°C
25°C
Figure 7. Base Emitter Saturation Voltage vs.
I
0.2
1.0
C
/I
T
B
J
= 10
= 125°C
2.0
0.5
0.001
Figure 5. DC Current Gain
-55°C
3.0 5.0
I
25°C
C
V
I
C
R
, COLLECTOR CURRENT (A)
Figure 3. Capacitance
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
1.0
Collector Current
2.0
10
0.01
20
5.0
C
ibo
30 50
10
100
0.1
20
V
T
C
CE
J
obo
200 300
= 25°C
= 1.0 V
50
500
100
1