MMBTA06LT1 ON Semiconductor, MMBTA06LT1 Datasheet - Page 4

• Manufacturer Part Number: MMBTA06LT1
• Description: TRANS DRIVER SS NPN 80V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBTA06LT1

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Dc: 0528
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMBTA06LT1OSCT

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MMBTA05LT1G
MMBTA05LT3G
MMBTA06LT1G
MMBTA06LT3G
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.5
0.0001
Figure 8. Base Emitter Voltage vs. Collector
V
CE
1.0
Figure 10. Base−Emitter Temperature
= 1 V
R
qVB
2.0
0.001
I
C
for V
I
, COLLECTOR CURRENT (A)
C
150°C
, COLLECTOR CURRENT (mA)
−55°C
25°C
Device
5.0
BE
Coefficient
10
Current
0.01
20
50
0.1
100
200
http://onsemi.com
500
1
4
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SOT−23
SOT−23
0.001
0.01
0.1
1.0
0.8
0.6
0.4
0.2
1
0
0.1
0.05
10 mA
I
C
50 mA
0.1
I
=
V
C
Figure 9. Collector Saturation Region
CE
=
Figure 11. Safe Operating Area
, COLLECTOR EMITTER VOLTAGE (V)
0.2
0.5
I
1
B
100 mA
, BASE CURRENT (mA)
I
C
Thermal Limit
=
1.0
1 S
10,000 / Tape & Reel
10,000 / Tape & Reel
100 mS
3000 / Tape & Reel
3000 / Tape & Reel
2.0
Shipping
250 mA
10 mS
I
C
=
5.0
10
†
10
500 mA
I
C
T
=
J
20
= 25°C
1 mS
100
50