MJE13005 ON Semiconductor, MJE13005 Datasheet

TRANS PWR NPN 4A 400V TO220AB

MJE13005

Manufacturer Part Number
MJE13005
Description
TRANS PWR NPN 4A 400V TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MJE13005

Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
1V @ 1A, 4A
Dc Current Gain (hfe) (min) @ Ic, Vce
8 @ 2A, 5V
Power - Max
2W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MJE13005OS

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MJE13005G
SWITCHMODEt Series
NPN Silicon Power
Transistors
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 9
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Emitter Current
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
These devices are designed for high−voltage, high−speed power
100_C is 180 ns (Typ)
V
Reverse Bias SOA with Inductive Loads @ T
Inductive Switching Matrix 2 to 4 A, 25 and 100_C t
700 V Blocking Capability
SOA and Switching Applications Information
These Devices are Pb−Free and are RoHS Compliant*
CEO(sus)
400 V
Characteristics
Rating
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
A
C
= 25_C
= 25_C
V
Symbol
Symbol
T
CEO(sus)
V
V
R
R
J
I
I
I
P
P
EBO
, T
T
CEV
CM
BM
EM
I
I
I
qJA
qJC
C
B
E
D
D
L
stg
C
= 100_C
−65 to
Value
0.016
+150
Max
62.5
1.67
400
700
275
0.6
12
75
9
4
8
2
4
6
2
c
@ 3A,
1
W/_C
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
_C
_C
W
W
MJE13005G
Device
400 VOLTS − 75 WATTS
POWER TRANSISTOR
1
ORDERING INFORMATION
A
Y
WW
G
2
3
MARKING DIAGRAM
http://onsemi.com
NPN SILICON
4 AMPERE
(Pb−Free)
MJE13005G
Package
= Assembly Location
= Year
= Work Week
= Pb−Free Package
TO−220
AY WW
CASE 221A−09
Publication Order Number:
TO−220AB
STYLE 1
50 Units / Rail
Shipping
MJE13005/D

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MJE13005 Summary of contents

Page 1

... Device L MJE13005G 1 http://onsemi.com 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 75 WATTS TO−220AB CASE 221A−09 STYLE MARKING DIAGRAM MJE13005G Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Package Shipping TO−220 50 Units / Rail (Pb−Free) Publication Order Number: MJE13005/D ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

T = 150° 25° 55° 0.1 0.2 0.4 0.6 0.04 0. COLLECTOR CURRENT (AMP) C Figure 1. DC ...

Page 4

I CPK 90% V clamp 10 90 TIME Figure 7. Inductive Switching Measurements Table 1. Typical Inductive Switching Performance Î Î Î Î Î Î Î Î Î ...

Page 5

Table 2. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING 0.001 DUTY CYCLE ≤ 10% 68 ≤ ...

Page 6

... Figure 12 gives the complete RBSOA characteristics. SECOND BREAKDOWN DERATING THERMAL DERATING 100 120 T , CASE TEMPERATURE (°C) C Figure 13. Forward Bias Power Derating http://onsemi.com 6 ≤ 100° 2 BE(off) MJE13005 200 300 400 500 600 700 , COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS) 140 160 1.5 V 800 ...

Page 7

... S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE13005/D ...

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