PZT3906T1 ON Semiconductor, PZT3906T1 Datasheet - Page 2

• Manufacturer Part Number: PZT3906T1
• Description: TRANS SS GP PNP 200MA 40V SOT223
• Manufacturer: ON Semiconductor

Specifications of PZT3906T1

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 1.5W
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: PZT3906T1OS

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS (Note 2)
ON CHARACTERISTICS (Note 2)
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
2. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small −Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CE
CE
CB
EB
= −1.0 mAdc, I
= −10 mAdc, I
= −10 mAdc, I
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −50 mAdc, V
= −100 mAdc, V
= −10 mAdc, I
= −50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= −10 mAdc, V
= −1.0 mAdc, V
= −1.0 mAdc, V
= −1.0 mAdc, V
= −1.0 mAdc, V
= −100 mAdc, V
= −0.5 Vdc, I
= −30 Vdc, V
= −30 Vdc, V
= −5.0 Vdc, I
C
E
B
B
B
B
B
C
CE
CE
CE
E
EB
EB
= 0)
= 0)
CE
CE
CE
CE
CE
CE
CE
= −1.0 mAdc)
= −5.0 mAdc)
= −1.0 mAdc)
= −5.0 mAdc)
CE
= 0)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= −1.0 Vdc)
= −1.0 Vdc)
= −20 Vdc, f = 100 MHz)
= −3.0 Vdc)
= −3.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −10 Vdc, f = 1.0 kHz)
= −10 Vdc, f = 1.0 kHz)
= −10 Vdc, f = 1.0 kHz)
= −10 Vdc, f = 1.0 kHz)
= −5.0 Vdc, R
= −1.0 Vdc)
Characteristic
S
= 1.0 kW, f = 1.0 kHz)
(T
A
= 25°C unless otherwise noted)
I
(V
(V
C
CC
CC
= −10 mAdc, I
I
= −3.0 Vdc, I
= −3.0 Vdc, V
B1
http://onsemi.com
= I
B2
= −1.0 mAdc)
B1
2
C
BE
= −1.0 mAdc)
= −10 mAdc,
= 0.5 Vdc,
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
H
C
CEX
h
I
h
h
NF
h
f
BL
obo
t
t
t
t
ibo
oe
FE
T
ie
re
fe
d
s
r
f
−0.65
−5.0
Min
−40
−40
100
250
100
2.0
0.1
3.0
60
80
60
30
−
−
−
−
−
−
−
−
−
−
−
−
−0.25
−0.85
−0.95
Max
−0.4
−50
−50
300
400
225
4.5
4.0
10
12
10
60
35
35
75
−
−
−
−
−
−
−
−
X 10
mmhos
nAdc
Unit
MHz
Vdc
Vdc
kW
dB
pF
ns
−
−
− 4