BC807-16LT3 ON Semiconductor, BC807-16LT3 Datasheet

TRANSISTOR PNP 45V 500MA SOT-23

BC807-16LT3

Manufacturer Part Number
BC807-16LT3
Description
TRANSISTOR PNP 45V 500MA SOT-23
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC807-16LT3

Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
225mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC807-16LT3G
Manufacturer:
ON
Quantity:
30 000
BC807-16LT1G,
BC807-25LT1G,
BC807-40LT1G
General Purpose
Transistors
PNP Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 9
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
Thermal Resistance,
Total Device Dissipation Alumina
Thermal Resistance,
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Junction−to−Ambient
Substrate, (Note 2) T
Derate above 25°C
Junction−to−Ambient
Characteristic
A
= 25°C
Rating
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
−500
−5.0
Max
−45
−50
225
556
300
417
1.8
2.4
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
mW
mW
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
5xx = Device Code
M
G
MARKING DIAGRAM
http://onsemi.com
BASE
1
1
= Date Code*
= Pb−Free Package
1
xx = A1, B1, or C
CASE 318
STYLE 6
SOT−23
5xx M G
COLLECTOR
2
Publication Order Number:
G
EMITTER
3
2
3
BC807−16LT1/D

Related parts for BC807-16LT3

BC807-16LT3 Summary of contents

Page 1

... SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM 5xx 5xx = Device Code xx = A1, B1 Date Code* = Pb−Free Package G (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Publication Order Number: BC807−16LT1/D ...

Page 2

... Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted.) A Symbol V (BR)CEO V (BR)CES V (BR)EBO I BC807−16 BC807−25 BC807−40 V CE(sat) V BE(on) C Specific Marking Package SOT−23 (Pb−Free) 5A1 SOT− ...

Page 3

... TYPICAL CHARACTERISTICS − BC807−16LT1 500 400 150°C 300 25°C 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 1. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 3. Base Emitter Saturation Voltage vs. ...

Page 4

... TYPICAL CHARACTERISTICS − BC807−16LT1 -1.0 -0.8 -0.6 -0 -0.01 +1.0 q for V VC CE(sat) 0 -1.0 q for -2.0 -1.0 -10 -100 I , COLLECTOR CURRENT C Figure 6. Temperature Coefficients T = 25° -500 -300 -100 mA C -0.1 -1.0 - BASE CURRENT (mA) B Figure 5. Saturation Region 100 10 1.0 -1000 -0 ...

Page 5

... TYPICAL CHARACTERISTICS − BC807−25LT1 500 150°C 400 25°C 300 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 8. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 10. Base Emitter Saturation Voltage vs. ...

Page 6

... TYPICAL CHARACTERISTICS − BC807−25LT1 -1.0 -0.8 -0.6 -0 -0.01 +1.0 q for V VC CE(sat) 0 -1.0 q for -2.0 -1.0 -10 -100 I , COLLECTOR CURRENT C Figure 14. Temperature Coefficients T = 25° -500 -300 -100 mA C -0.1 -1.0 - BASE CURRENT (mA) B Figure 13. Saturation Region 100 10 1.0 -1000 -0 ...

Page 7

... TYPICAL CHARACTERISTICS − BC807−40LT1 1000 900 800 150°C 700 600 500 25°C 400 300 −55°C 200 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 16. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 ...

Page 8

... TYPICAL CHARACTERISTICS − BC807−40LT1 -1.0 -0.8 -0.6 -0 -0.01 +1.0 q for V VC CE(sat) 0 -1.0 q for -2.0 -1.0 -10 -100 I , COLLECTOR CURRENT C Figure 22. Temperature Coefficients T = 25° -500 -300 -100 mA C -0.1 -1.0 - BASE CURRENT (mA) B Figure 21. Saturation Region 100 10 1.0 -1000 -0 ...

Page 9

... TYPICAL CHARACTERISTICS − BC807−16LT1, BC807−25LT1, BC807−40LT1 1 0.1 0.01 0.001 0 COLLECTOR EMITTER VOLTAGE (V) CE Figure 24. Safe Operating Area http://onsemi.com 100 Thermal Limit 10 100 9 ...

Page 10

... E STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR 2.0 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BC807−16LT1/D MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 ...

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