BC807 Fairchild Semiconductor, BC807 Datasheet

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BC807

Manufacturer Part Number
BC807
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2002 Fairchild Semiconductor Corporation
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC817/BC818
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
h
V
V
f
C
C
CES
EBO
T
Symbol
J
STG
FE1
FE2
CES
CEO
EBO
C
CE
BE
ob
CEO
CES
EBO
Symbol
(on)
(sat)
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
: BC807
: BC808
: BC807
: BC808
T
a
=25 C unless otherwise noted
T
: BC807
: BC808
: BC807
: BC808
Parameter
BC807/BC808
a
=25 C unless otherwise noted
I
I
I
V
V
V
V
I
V
V
f=50MHz
V
C
C
E
C
CE
EB
CE
CE
CE
CE
CB
= -10mA, I
= -0.1mA, V
= -0.1mA, I
= -500mA, I
= -25V, V
= -4V, I
= -1V, I
= -1V, I
= -1V, I
= -5V, I
= -10V, f=1MHz
Test Condition
C
C
C
C
C
B
=0
= -100mA
= -300mA
= -300mA
= -10mA
C
BE
=0
B
BE
=0
= -50mA
=0
=0
Min.
100
-45
-25
-50
-30
60
-5
1. Base 2. Emitter 3. Collector
-65 ~ 150
Value
-800
-310
150
-50
-30
-45
-25
3
-5
Typ.
100
1
Max.
-100
-100
630
-0.7
-1.2
12
SOT-23
Rev. A2, August 2002
Units
mW
mA
2
V
V
V
V
V
C
C
Units
MHz
nA
nA
pF
V
V
V
V
V
V
V

BC807 Summary of contents

Page 1

... Collector-Emitter Saturation Voltage CE V (on) Base-Emitter On Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob ©2002 Fairchild Semiconductor Corporation BC807/BC808 T =25 C unless otherwise noted a Parameter : BC807 : BC808 : BC807 : BC808 T =25 C unless otherwise noted a Test Condition I = -10mA -0.1mA ...

Page 2

... Classification FE Classification h FE1 h FE2 Marking Code Type 807-16 Marking 9FA ©2002 Fairchild Semiconductor Corporation 16 25 100 ~ 250 160 ~ 400 60- 100- 807-25 807-40 808-16 9FB 9FC 9GA 40 250 ~ 630 170- 808-25 808-40 9GB 9GC Rev. A2, August 2002 ...

Page 3

... I [mA], COLLECTOR CURRENT C Figure 3. DC current Gain -1000 V = -1V CE PULSE -100 -10 -1 -0.1 -0.4 -0.5 -0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation -20 -16 - -10 PULSE 2. 1.0V -0.1 -0.01 -100 -1000 -0.1 Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 ...

Page 4

... Typical Characteristics 1000 100 10 -1 -10 I [mA], COLLECTOR CURRENT C Figure 7. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation (Continued -5.0V CE -100 Rev. A2, August 2002 ...

Page 5

... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A2, August 2002 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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