BC557C ON Semiconductor, BC557C Datasheet - Page 190

• Manufacturer Part Number: BC557C
• Description: TRANS AMP PNP 45V 100MA TO-92
• Manufacturer: ON Semiconductor

Specifications of BC557C

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 320MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BC557COS

21. V
22. V
TVS/ESD PROTECTION − Two Line
mESD3.3D Series
Two Line ESD Protection in SOT−723; Meets IEC61000−4−2, Level 4
ELECTRICAL CHARACTERISTICS
Unidirectional
TVS/ESD PROTECTION − Four Line
NUP4000DR2G − Four Line
Four Line TVS/ESD in SO−8; Meets IEC610000−4−C, Level 4
ELECTRICAL CHARACTERISTICS
Bidirectional
mESD3.3D
mESD5.0D
mESD6.0D
NUP4000DR2G
BR
BR
Device
measured at pulse test current I
measured at pulse test current I
Device
V
8
BR
Breakdown Voltage
3
(Note 22)
16.7
Min
(V)
1
1
2
T
T
at an ambient temperature of 25°C.
(mA)
at an ambient temperature of 25°C.
@ I
(T
(T
1.0
A
A
T
= 25°C unless otherwise noted)
= 25°C unless otherwise noted)
Working Peak
V
Min
Reverse
Voltage
5.0
6.2
7.0
CASE 751
RWM
15.0
CASE 631AA
(continued)
SO−8
http://onsemi.com
SOT−723
STYLE 4
(V)
V
BR
189
Nom
(Note 21)
Breakdown Voltage
(V)
Leakage
Reverse
Current
−
−
−
I
R
Max
1.0
(mA)
ON Semiconductor Selector Guide − Diodes
1
2
3
4
V
Max
C
−
−
−
(V) @ I
= 1 A
1
2
24.0
PP
V
(mA)
@ I
C
1.0
1.0
1.0
(V) @ I
8
7
6
5
T
30.0
5 A
3
PP
=
(mA) @ V
Leakage
Reverse
Current
Capacitance
Max
Pin 1 to 2
1.0
0.1
0.1
Typical
I
@ 0 V
R
(pF)
75.0
RWM
)