BC557C ON Semiconductor, BC557C Datasheet - Page 193

• Manufacturer Part Number: BC557C
• Description: TRANS AMP PNP 45V 100MA TO-92
• Manufacturer: ON Semiconductor

Specifications of BC557C

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 320MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BC557COS

25. V
LOW CAPACITANCE TVS/ESD PROTECTION − One Line
ESD9M Series
Single Line Unidirectional TVS/ESD in SOD−923; Meets IEC61000−4−2, Level 4
ELECTRICAL CHARACTERISTICS
Unidirectional
ON Semiconductor Selector Guide − Diodes
ESD9M5.0S
TVS PROTECTION − Low Capacitance Surface Mount for USB 2.0 and 1.1
ESD Protection Meeting IEC 61000−4−2, 4−4, 4−5
USB 2.0
NUP2301MW6
BR
Device
measured at pulse test current I
Device
Min
6
70
5
4
Breakdown Voltage
1
V
2
Nom
BR
3
−
(V)
T
at an ambient temperature of 25°C.
(T
Max
A
−
= 25°C unless otherwise noted)
(mA)
@ I
−
T
V
CASE 419B
BR
(Note 11)
http://onsemi.com
CASE 514AB
SC−88
Breakdown Voltage
Min
Leakage Current
(V) @ I
5.8
SOD−923
(mA)
Max Reverse
0.1
I
R
192
T
V
RWM
(V)
2.5
(mA)
@ I
1.0
T
Capacitance*
Typ
(pF) @ 0 V,
0.8
1.0 MHz
1
Working Peak
Max
I/O
V
V
(continued)
1.5
V
N
Reverse
P
Voltage
RWM
5.0
3
1
2
(V)
Max Re-
Current
Surge
verse
I
(A)
PP
−
2
Leakage
Reverse
Current
I
R
Max
(Clamping
Voltage @
1.0
(mA)
Reverse
Voltage)
Max
I
(V)
6
5
5
4
V
PP
−
C
N/C
I/O
N/C
Capacitance
Peak Power
(8x20 msec)
Pin 1 to 2
@ 0 V
Rating
Max
(pF)
Watts
2.5
−