UNR51A1G0L Panasonic - SSG, UNR51A1G0L Datasheet

TRANS PNP W/RES 35HFE S-MINI 3P

UNR51A1G0L

Manufacturer Part Number
UNR51A1G0L
Description
TRANS PNP W/RES 35HFE S-MINI 3P
Manufacturer
Panasonic - SSG
Datasheet

Specifications of UNR51A1G0L

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
80mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
80MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
S-Mini 3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UNR51A1G0LTR
Transistors with built-in Resistor
UNR51A1G
Silicon PNP epitaxial planar type
For digital circuits
 Features
 Absolute Maximum Ratings T
 Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2008
 Costs can be reduced through downsizing of the equipment and reduction of
 SMini type package allowing easy automatic insertion through tape packing
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
the number of parts.
Parameter
Parameter
a
= 25°C±3°C
a
= 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
Symbol
V
V
T
P
CBO
I
T
Symbol
CEO
stg
V
C
R
T
j
V
V
I
I
I
V
V
1
h
CE(sat)
CBO
CEO
EBO
R
CBO
f
CEO
FE
OH
OL
/ R
T
1
2
–55 to +150
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
–50
–50
–80
150
150
CB
CE
EB
CE
CC
CC
CB
= -10 mA, I
= -2 mA, I
= -10 mA, I
= -50 V, I
= -6 V, I
= -10 V, I
= -50 V, I
= -5 V, V
= -5 V, V
= -10 V, I
SJH00263AED
C
B
E
Unit
mW
Conditions
B
B
B
C
mA
E
E
B
= 0
°C
°C
= 0
V
V
= 0
= - 0.5 V, R
= - 2.5 V, R
= 0
= 0
= -5 mA
= 1 mA, f = 200 MHz
= - 0.3 mA
L
L
= 1 kW
= 1 kW
 Package
 Marking Symbol: CE
 Internal Connection
 Code
 Pin Name
SMini3-F2
1: Base
2: Emitter
3: Collector
-30%
-4.9
Min
-50
-50
0.8
35
B
(10 kΩ)
R
1
R
(10 kΩ)
2
Typ
10
80
1
- 0.25
+30%
- 0.1
- 0.5
- 0.5
- 0.2
Max
1.2
C
E
MHz
Unit
mA
kW
mA
mA
V
V
V
V
V
1

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