UNR51A1G0L Panasonic - SSG, UNR51A1G0L Datasheet - Page 2
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UNR51A1G0L
Manufacturer Part Number
UNR51A1G0L
Description
TRANS PNP W/RES 35HFE S-MINI 3P
Manufacturer
Panasonic - SSG
Datasheet
1.UNR51A1G0L.pdf
(4 pages)
Specifications of UNR51A1G0L
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
80mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
80MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
S-Mini 3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UNR51A1G0LTR
UNR51A1G
2
−10
−10
160
120
−10
200
150
100
80
40
−1
50
−10
−1
0
0
2
−1
0
−1
Ambient temperature T
Collector current I
Output current I
40
UNR51A1G_h
UNR51A1G_V
UNR51A1G_P
−1
V
h
P
T
FE
IN
T
a
−10
= 85°C
T
80
I
I
−25°C
a
C
O
−10
O
V
T
FE
T
C
IN
V
a
O
-T
-I
(mA)
-I
= 25°C
120
CE
(mA)
= − 0.2 V
C
a
a
O
25°C
= −10 V
(°C)
This product complies with the RoHS Directive (EU 2002/95/EC).
−10
−10
160
2
2
−80
−60
−40
−20
0
4
2
0
−1
0
Collector-emitter voltage V
T
Collector-base voltage V
a
= 25°C
SJH00263AED
UNR51A1G_I
UNR51A1G_C
−4
C
I
C
ob
V
−10
V
CE
CB
C
−8
ob
-V
-V
f = 1 MHz
T
CE
a
CB
I
CB
B
= 25°C
CE
= −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
(V)
(V)
−10
−12
2
−10
−10
−10
−10
−10
−10
−10
−1
−1
−1
−2
−1
−2
−3
−1
0
Collector current I
UNR51A1G_V
25°C
Input voltage V
UNR51A1G_I
T
V
a
− 0.8
= 85°C
CE(sat)
I
O
V
−10
I
−25°C
IN
CE(sat)
O
IN
V
T
C
-V
C
a
O
I
C
= 25°C
(mA)
(V)
IN
= − 0.2 V
−1.6
-I
/ I
C
B
= 10
−10
2