DDTC115TE-7-F Diodes Inc, DDTC115TE-7-F Datasheet - Page 2

• Manufacturer Part Number: DDTC115TE-7-F
• Description: TRANS PREBIASED NPN 150MW SOT523
• Manufacturer: Diodes Inc

Specifications of DDTC115TE-7-F

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DDTC115TE-FDITR

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Input Resistor (R
Gain-Bandwidth Product*
* Transistor – For Reference Only
DS30315 Rev. 6 – 2
1
Characteristic
) Tolerance
@T
A
= 25°C unless otherwise specified
Symbol
V
BV
BV
BV
ΔR
I
I
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
EBO
T
1
Min
www.diodes.com
100
-30
50
50
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5
2 of 4
Typ
250
250
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⎯
⎯
⎯
⎯
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Max
600
+30
0.5
0.5
0.3
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⎯
⎯
MHz
Unit
μA
μA
⎯
%
V
V
V
V
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
C
C
E
C
C
C
C
C
C
C
C
C
CB
EB
CE
/I
/I
/I
/I
/I
/I
/I
/I
= 50mA
= 1mA
= 50μA
= 1mA, V
B
B
B
B
B
B
B
B
= 4V
= 50V
= 10V, I
= 10mA/1mA
= 5mA/0.5mA
= 2.5mA/.25mA DDTC143TE
= 1mA/.1mA
= 5mA/0.5mA
= 2.5mA/.25mA DDTC144TE
= 1mA/0.1mA
= .5mA/.05mA
DDTC (R1-ONLY SERIES) E
Test Condition
CE
E
= -5mA, f = 100MHz
= 5V
⎯
© Diodes Incorporated
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