DDTC115TE-7-F Diodes Inc, DDTC115TE-7-F Datasheet - Page 3

• Manufacturer Part Number: DDTC115TE-7-F
• Description: TRANS PREBIASED NPN 150MW SOT523
• Manufacturer: Diodes Inc

Specifications of DDTC115TE-7-F

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DDTC115TE-FDITR

DS30315 Rev. 6 – 2
0.001
1,000
150
0.01
250
200
100
100
100
50
0.1
10
10
0
1
1
-50
1
0
1
Fig. 5 Collector Current vs. Input Voltage
T , AMBIENT TEMPERATURE ( C)
I , COLLECTOR CURRENT (mA)
C
A
2
0
V , INPUT VOLTAGE (V)
Fig. 3 DC Current Gain
in
Fig. 1 Derating Curve
3
4
10
50
5
6
TYPICAL CURVES – DDTC114TE
7
100
8
°
V
CE
= 10
9
100
150
10
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0.001
0.01
10
0.1
4
2
3
0
1
1
1
1
0
0
0
V = 0.2
O
I /I = 10
C B
Fig. 6 Input Voltage vs. Collector Current
5
V , REVERSE BIAS VOLTAGE (V)
-25°C
25°C
R
10
I , COLLECTOR CURRENT (mA)
10
I , COLLECTOR CURRENT (mA)
C
C
Fig. 4 Output Capacitance
75 C °
10
Fig. 2 V
25 C °
20
20
75 C °
15
CE(SAT)
DDTC (R1-ONLY SERIES) E
30
30
vs. I
20
-25 C °
C
40
40
25
© Diodes Incorporated
30
50
50